Optical injection of spin-polarized carriers in indirect gap semiconductors
| Project/Area Number |
26400317
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Condensed matter physics I
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| Research Institution | Kyoto University |
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Principal Investigator |
Naka Nobuko 京都大学, 理学研究科, 准教授 (10292830)
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| Co-Investigator(Kenkyū-buntansha) |
秋元 郁子 和歌山大学, システム工学部, 准教授 (00314055)
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| Research Collaborator |
STOLZ Heinrich ロストク大学, 物理学科, 教授
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2014: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | 光キャリア / 間接遷移型半導体 / スピン緩和 |
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| Outline of Final Research Achievements |
Indirect bandgap semiconductors including silicon are currently a major focus of research for solar cell and spin device applications. However, there had been no report on the spin relaxation time of optically injected delocalized carriers in diamond. In this study, we demonstrated optical injection of spin-polarized carriers in indirect bandgap semiconductors, which paves a way to the versatile applications of spin and momentum degrees of freedom.
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Report
(4 results)
Research Products
(55 results)
