| Project/Area Number |
26410092
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Functional solid state chemistry
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| Research Institution | Institute of Physical and Chemical Research (2015-2017)
Osaka University (2014) |
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Principal Investigator |
Yokota Yasuyuki 国立研究開発法人理化学研究所, Kim表面界面科学研究室, 研究員 (00455370)
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| Co-Investigator(Renkei-kenkyūsha) |
TAKEYA Jun-ichi 東京大学, 新領域創成科学研究科, 教授 (20371289)
UEMURA Takafumi 東京大学, 新領域創成科学研究科, 講師 (30448097)
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| Project Period (FY) |
2014-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2014: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | 電気二重層トランジスタ / 原子間力顕微鏡 / イオン液体 / 有機半導体 / 古典分子動力学計算 / 界面構造 / 同時計測 |
|---|
| Outline of Final Research Achievements |
To achieve high charge carrier densities with minimum applying voltages, electric double layer field effect transistors (EDL-FETs), where the conventional solid dielectrics are replaced with electrolytes such as ionic liquids (ILs) to form EDL at the electrolyte / semiconductor interface, have been intensively investigated. Microscopic understandings of the carrier transport and the long-term stability of EDL-FETs using ILs have been very limited due to the complexity of the IL / semiconductor interfaces. In this study, we directly visualized the interface using atomic force microscopy, revealing the relationship between the device performance and the step density of the semiconductor.
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