Growth of ZnOS quantum dot films and its application to light emitting devices
| Project/Area Number |
26410252
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Device related chemistry
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| Research Institution | Shizuoka University |
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Principal Investigator |
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2016: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2015: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2014: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | ZnOS / 量子ドット / p型化 / 発光 / p型 / 過剰硫黄 / Ag添加 / ｐ型 / 硫黄処理 / LED |
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| Outline of Final Research Achievements |
We have revealed the electrical and optical properties of ZnOS films grown by sputtering, pulsed laser deposition (PLD), and chemical vapor deposition (CVD). By PLD with S-evaporation, p-type ZnOS films with S-content of 30% were grown. The growth of p-type ZnOS films was also achieved by ZnOS target containing 2 mol% Na atoms. ZnOS films containing quantum dots were grown by CVD. As the growth temperature decreases, the optical band gap of ZnOS films is enhanced. The ZnOS films grown at 125 °C exhibit a defect-related emission at 500 nm. The ordered ZnOS films, which were prepared at interfaces between ZnO and ZnS films, show an inter-band emission in the range of 350 to 400 nm.
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Report
(4 results)
Research Products
(9 results)
