Development of electric field assisted lapping technology for SiC semiconductor substrate
| Project/Area Number |
26420068
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Multi-year Fund |
|---|
| Section | 一般 |
|---|
| Research Field |
Production engineering/Processing studies
|
|---|
| Research Institution | Akita Industrial Technology Center |
|---|
Principal Investigator |
KUSUMI Takayuki 秋田県産業技術センター, 素形材プロセス開発部, 主任研究員 (40370233)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
池田 洋 秋田県産業技術センター, 素形材プロセス開発部, 非常勤研究員 (90573098)
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
AKAGAMI Yoichi 秋田県産業技術センター, 副所長 (00373217)
|
|---|
| Project Period (FY) |
2014-04-01 – 2017-03-31
|
| Project Status |
Completed (Fiscal Year 2016)
|
| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2016: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2015: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2014: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
|
|---|
| Keywords | スラリー / 研磨 / ラッピング / 電界 / 半導体 / ウェーハ / 周波数 / 砥粒 |
|---|
| Outline of Final Research Achievements |
In order to contribute to the spread of silicon carbide wafer semiconductors, we propose a new "electric field assisted lapping technique" compatible with improvement of surface quality and processing efficiency in lapping process of substrate processing. Through observation experiments, it was found that the dispersion of abrasive grains due to electric field has applied frequency dependency and natural frequency exists. We also performed an electric field assisted lapping experiment using sapphire as a sample to confirm the effect of improving lapping efficiency and the effect of improving surface roughness.
|
Report
(4 results)
Research Products
(16 results)
