| Project/Area Number |
26420071
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Japan Fine Ceramics Center |
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Principal Investigator |
ISHIKAWA Yukari 一般財団法人ファインセラミックスセンター, その他部局等, 主席研究員 (60416196)
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| Co-Investigator(Kenkyū-buntansha) |
菅原 義弘 一般財団法人ファインセラミックスセンター, その他部局等, 上級研究員 (70466291)
姚 永昭 一般財団法人ファインセラミックスセンター, その他部局等, 上級研究員 (80523935)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2016: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2015: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2014: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | 材料工学 / 単結晶 / 加工 / 潜傷 / 転位 / 積層欠陥 / ＳｉＣ / 欠陥 / EBSD / SiC / ダイヤ |
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| Outline of Final Research Achievements |
We investigated the defect structures in 4H-SiC single crystal induced by the model machining under control of abrasive motion. Wiresawing with fixed abrasive i.e. machining with abrasive translation uniformly introduced defects: high density defective layer, dislocation half loops, and stacking faults. On the other hand, distributed defects: stacking fault and triangular defective area with dislocation half-loop bundle were formed after wiresawing with loose abrasive i.e. machining with abrasive translation and rotation.
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