Investigation of formation mechanism of crystal defects induced by machining at the surface of single crystal SiC

• Project/Area Number: 26420071
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Production engineering/Processing studies
• Research Institution: Japan Fine Ceramics Center
• Principal Investigator: ISHIKAWA Yukari 一般財団法人ファインセラミックスセンター, その他部局等, 主席研究員 (60416196)
• Co-Investigator(Kenkyū-buntansha): 菅原 義弘 一般財団法人ファインセラミックスセンター, その他部局等, 上級研究員 (70466291) ; 姚 永昭 一般財団法人ファインセラミックスセンター, その他部局等, 上級研究員 (80523935)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Project Status: Completed (Fiscal Year 2016)
• Budget Amount: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000); Fiscal Year 2016: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2015: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000); Fiscal Year 2014: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
• Keywords: 材料工学 / 単結晶 / 加工 / 潜傷 / 転位 / 積層欠陥 / ＳｉＣ / 欠陥 / EBSD / SiC / ダイヤ

Outline of Final Research Achievements

We investigated the defect structures in 4H-SiC single crystal induced by the model machining under control of abrasive motion. Wiresawing with fixed abrasive i.e. machining with abrasive translation uniformly introduced defects: high density defective layer, dislocation half loops, and stacking faults. On the other hand, distributed defects: stacking fault and triangular defective area with dislocation half-loop bundle were formed after wiresawing with loose abrasive i.e. machining with abrasive translation and rotation.

Research Products

• [Journal Article] Fast removal of surface damage layer from single crystal diamond by using chemical etching in molten KCl + KOH solution (2016)
  • Author(s): Y. Yao, Y. Ishikawa, Y. Sugawara, H. Yamada, A. Chayahara, Y.Mokuno
  • Journal Title: Diamond & Related Materials Volume: 63 Pages: 86-90
  • DOI: 10.1016/j.diamond.2015.10.003
  • Peer Reviewed
• [Journal Article] Comparison of slicing-induced damage in hexagonal SiC by wire sawing with loose abrasive,wire sawing with fixed abrasive, and electric discharge machining (2014)
  • Author(s): Yukari Ishikawa, Yong-Zhao Yao, Yoshihiro Sugawara, Koji Sato, Yoshihiro Okamoto,Noritaka Hayashi, Benjamin Dierre, Kentaro Watanabe, and Takashi Sekiguchi
  • Journal Title: Japanese Journal of Applied Physics Volume: 53 Issue: 7 Pages: 1-11
  • DOI: 10.7567/jjap.53.071301
  • NAID: 210000144159
  • Peer Reviewed / Acknowledgement Compliant
• [Presentation] Fast removal of surface damage layer from single crystal diamond by using chemical etching in molten KCl + KOH solution (2015)
  • Author(s): Y. Yao, Y. Ishikawa, Y. Sugawara, H. Yamada, A. Chayahara, Y.Mokuno
  • Organizer: The 9th International Conference on New Diamond and Nano Carbons
  • Place of Presentation: 静岡グランシップ
  • Year and Date: 2015-05-24
  • Int'l Joint Research
• [Presentation] 遊離砥粒ワイヤーソーと放電加工で切断表面に導入された欠陥の比較 (2014)
  • Author(s): 石川由加里，姚 永昭，佐藤功二，菅原義弘，岡本好弘，林 紀孝
  • Organizer: 先進パワー半導体分科会 第１回講演会
  • Place of Presentation: ウインクあいち
  • Year and Date: 2014-11-19 – 2014-11-20