| Budget Amount *help |
¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2016: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2015: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2014: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Outline of Final Research Achievements |
Experimental and numerical studies were carried out for Czochralski melt convection under the rotational magnetic field and the electromagnetic field. A silicon single crystal for the semiconductor is mainly manufactured by Czochralski method. The quality of grown crystal is determined by the melt flow, so that the static magnetic field applied the melt to control the melt convection, nowadays. The model experiment using Gallium melt was carried out under the rotational magnetic field and the electromagnetic field. In addition, the numerical computation was carried out to visualize the melt convection under the rotational magnetic field. The rotational magnetic field and the electromagnetic field had an advantage to control the melt convection than the traditional static magnetic field in spite of the weak magnetic field.
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