Remote measurement of junction temperature of LEDs using pulsed-laser Raman scattering spectroscopy
| Project/Area Number |
26420237
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Multi-year Fund |
|---|
| Section | 一般 |
|---|
| Research Field |
Power engineering/Power conversion/Electric machinery
|
|---|
| Research Institution | Kyushu University |
|---|
Principal Investigator |
|
|---|
| Project Period (FY) |
2014-04-01 – 2017-03-31
|
| Project Status |
Completed (Fiscal Year 2016)
|
| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2015: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2014: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
|
|---|
| Keywords | LED / ジャンクション温度 / パルスレーザー / ラマン散乱 / GaN / 蛍光樹脂 / 温度分布 / 同時計測 / 照明用白色LED / 1次元分布 |
|---|
| Outline of Final Research Achievements |
A novel method by using a pulsed-laser Raman scattering technique was employed to estimate junction temperatures of several chips arranged on a straight line in a phosphor-less blue-LED package and a phosphor-deposited blue-LED (white-LED) package. Simultaneous observation of GaN-E2H Raman spectra from the several chips was done successfully by using a sheet-shaped laser beam. This technique was applied to estimation of the junction temperatures of the several chips in the phosphor-less blue LED package during operation. Also, the GaN-E2H Raman signal from the white-LED was observed for the first time by using a 633 nm laser reducing the influence of the phosphor and the scatterer on the Raman measurement. It is concluded that this technique would be a useful method for remoteness and simultaneous multipoint measurement of the junction temperature of a white-LED package in which several chips are integrated.
|
Report
(4 results)
Research Products
(18 results)
