| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2016: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2015: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2014: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Outline of Final Research Achievements |
We have developed nonvolatile organic transistor memories that enable to fabricate all organic layers by simple solution processes using soluble molecular semiconductors as floating gates. It is found that developed memory devices exhibit large threshold voltage shifts, good programming/erasing characteristics, and a relatively long charge retention time. We have shown that the operation mechanism of the memory devices can be explained on the basis of the energy band diagrams of organic semiconductors.
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