Development of fundamental technology for the fabrication of flexible solution-processable organic transistor memories
Project/Area Number |
26420276
|
Research Category |
Grant-in-Aid for Scientific Research (C)
|
Allocation Type | Multi-year Fund |
Section | 一般 |
Research Field |
Electronic materials/Electric materials
|
Research Institution | Osaka Prefecture University |
Principal Investigator |
Nagase Takashi 大阪府立大学, 工学(系)研究科(研究院), 准教授 (00399536)
|
Project Period (FY) |
2014-04-01 – 2017-03-31
|
Project Status |
Completed (Fiscal Year 2016)
|
Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2016: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2015: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2014: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
|
Keywords | 有機トランジスタ / 有機メモリ / 塗布型有機半導体 / フローティングゲート / 溶液プロセス / トップゲート構造 |
Outline of Final Research Achievements |
We have developed nonvolatile organic transistor memories that enable to fabricate all organic layers by simple solution processes using soluble molecular semiconductors as floating gates. It is found that developed memory devices exhibit large threshold voltage shifts, good programming/erasing characteristics, and a relatively long charge retention time. We have shown that the operation mechanism of the memory devices can be explained on the basis of the energy band diagrams of organic semiconductors.
|
Report
(4 results)
Research Products
(39 results)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
[Presentation] n型ポリマーを用いた高移動度トップゲート電界効果トランジスタ2015
Author(s)
末永 悠, 永瀬 隆, 小林隆史, Ye-Jin Hwang, Samson Jenekhe, 内藤裕義
Organizer
大阪府立大学21世紀科学研究機構 分子エレクトロニックデバイス研究所 第17回研究会
Place of Presentation
大阪府立大学なかもずキャンパス(大阪府堺市)
Year and Date
2015-11-06
Related Report
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-