| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Outline of Final Research Achievements |
Characterization and device applications of II-VI compound semiconductor type-II hetero materials on InP substrates were proceeded. A method to evaluate conduction band discontinuities of ZnCdSe/BeZnTe hetero junctions using n-i-n diodes was proposed. Optical absorption characteristics of ZnCdSe/BeZnTe type-II superlattices were evaluated by photovoltage spectrum measurements, and compared with photoluminescence characteristics. Carrier injection efficiencies in laser structures were theoretically investigated to optimize the structures, which were experimentally confirmed. MgSe/ZnCdSe resonant tunneling diodes were fabricated, observing clear negative differential resistances in applied voltage versus injection current characteristics at room temperature.
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