| Project/Area Number |
26420281
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo University of Science, Suwa |
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Principal Investigator |
Fukuda Yukio 諏訪東京理科大学, 工学部, 教授 (50367546)
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| Co-Investigator(Kenkyū-buntansha) |
岡本 浩 弘前大学, 理工学研究科, 教授 (00513342)
王谷 洋平 諏訪東京理科大学, 工学部, 准教授 (40434485)
佐藤 哲也 山梨大学, 総合研究部, 准教授 (60252011)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2016: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2015: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2014: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | 誘電体薄膜 / 表面・界面物性 / 超薄膜 / MOS構造 / プラズマ酸化 / 原子層堆積法 / 金属ジャーマネイト / ゲルマニウム / 誘電体物性 / ラジカル酸化 / MIS構造 / ＭＩＳ構造 |
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| Outline of Final Research Achievements |
In the present research subject, we have investigated background kinetics of metal-germanate formations on germanium substrates by radical-enhanced atomic layer deposition (REALD), where microwave-generated oxygen radicals are used as an oxidant of surface-adsorbed metal precursors, and its application to the formations of gate-dielectrics of Ge-MOSFETs. We have found that argon ions with kinetic energies of ~5 eV enhance the germanate formations. We have also succeeded in the formations of Ge-MOS capacitor with an oxide-equivalent thickness of 1 nm.
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