Investigation on hydrogen interaction with nitride-based semiconductor metal/semiconductor interfaces
| Project/Area Number |
26420286
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
Irokawa Yoshihiro 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点 電気・電子機能分野 ワイドバンドギャップ材料グループ, 主任研究員 (90394832)
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| Co-Investigator(Renkei-kenkyūsha) |
Nakano Yoshitaka 中部大学, 工学部電子情報工学科, 教授 (60394722)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2016: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Keywords | 水素 / 窒化物半導体 / 界面 / センサ / 半導体デバイス / 絶縁膜 |
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| Outline of Final Research Achievements |
The interaction of hydrogen with semiconductor devices has long been studied. Intensive research has led to a model which attributes the reaction mechanism of the devices to hydrogen to the formation of a hydrogen-induced dipole layer at the metal-dielectric interface. Here, I showed that hydrogen does not create an electric double layer at the interface but change the property of the dielectric, resulting in the hydrogen sensitivity of the devices.
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Report
(4 results)
Research Products
(8 results)
