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Photogalvanic effects in semiconductor quantum structure

Research Project

Project/Area Number 26420288
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionNational Institute for Materials Science

Principal Investigator

Kawazu Takuya  国立研究開発法人物質・材料研究機構, 機能性材料拠点, 主任研究員 (00444076)

Co-Investigator(Renkei-kenkyūsha) Ohmori Masato  名古屋大学, 産学協同研究部門, 特任講師 (70454444)
Akiyama Yoshihiro  豊田工業大学, 工学研究科, 研究員 (60469773)
Project Period (FY) 2014-04-01 – 2017-03-31
Project Status Completed (Fiscal Year 2016)
Budget Amount *help
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2014: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Keywords電子デバイス / 量子構造 / 赤外材料・素子 / 電界効果トランジスタ / n-AlGaAs/GaAsヘテロ接合 / ショットキバリア光検出器 / 2次元電子 / 量子ドット / ガリウムアンチモン / アルミニウムアンチモン / 高指数面基板
Outline of Final Research Achievements

This work demonstrated the generation of lateral photocurrents in selectively doped n-AlGaAs/GaAs heterojunction samples by using two novel methods of (1) the local illumination of the metal gate and (2) the embedding of anisotropic quantum dots (QDs).
We observed the lateral current induced in an n-AlGaAs/GaAs heterojunction channel of Hall bar geometry, when an asymmetric position of the Schottky metal gate is locally irradiated by a near infrared laser beam. The magnitude of the lateral current is almost linearly dependent on the beam position, the current reaching its maximum for the beam at the edge of the Schottky gate. We also fabricated a selectively doped n-AlGaAs/GaAs heterojunction sample with embedded anisotropic QDs and investigated lateral photocurrents. We found that the lateral currents flow when the sample edge is locally irradiated by a near infrared laser beam.
In addition, we grew several kinds of semiconductor nanostructures and clarify their optical properties.

Report

(4 results)
  • 2016 Annual Research Report   Final Research Report ( PDF )
  • 2015 Research-status Report
  • 2014 Research-status Report
  • Research Products

    (17 results)

All 2017 2016 2015 2014 Other

All Journal Article (7 results) (of which Peer Reviewed: 7 results,  Open Access: 1 results,  Acknowledgement Compliant: 4 results) Presentation (7 results) (of which Int'l Joint Research: 2 results) Remarks (3 results)

  • [Journal Article] Effects of Ga deposition rate and Sb flux on morphology of GaSb quantum dots formed on GaAs2017

    • Author(s)
      T. Kawazu, T. Noda, Y. Sakuma, and H. Sakaki
    • Journal Title

      Physica Status Solidi (c)

      Volume: 14 Issue: 1-2

    • DOI

      10.1002/pssc.201600109

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Photoinduced current in n-AlGaAs/GaAs heterojunction field-effect transistor driven by local illumination in edge regions of Schottky metal gate2017

    • Author(s)
      T. Kawazu, T. Noda, and Y. Sakuma
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 56 Issue: 4S Pages: 04CG04-04CG04

    • DOI

      10.7567/jjap.56.04cg04

    • NAID

      210000147611

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy2016

    • Author(s)
      T. Kawazu, T. Noda, Y. Sakuma and H. Sakaki
    • Journal Title

      AIP Advances

      Volume: 6 Issue: 4

    • DOI

      10.1063/1.4947464

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Optical anisotropy of InGaAs quantum wire arrays on vicinal (111)B GaAs2016

    • Author(s)
      T. Kawazu
    • Journal Title

      Journal of Applied Physics

      Volume: 120 Issue: 13

    • DOI

      10.1063/1.4964338

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Lateral current generation in n-AlGaAs/GaAs heterojunction channels by Schottky-barrier gate illumination2015

    • Author(s)
      T. Kawazu, T. Noda, Y. Sakuma, and H. Sakaki
    • Journal Title

      Appl. Phys. Lett.

      Volume: 106 Issue: 2

    • DOI

      10.1063/1.4905661

    • Related Report
      2015 Research-status Report
    • Peer Reviewed
  • [Journal Article] Growth and optical properties of GaSb/GaAs type-II quantum dots with and without wetting layer2015

    • Author(s)
      T. Kawazu, T. Noda, T. Mano, Y. Sakuma, and H. Sakaki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 54 Issue: 4S Pages: 04DH01-04DH01

    • DOI

      10.7567/jjap.54.04dh01

    • NAID

      210000145025

    • Related Report
      2014 Research-status Report
    • Peer Reviewed
  • [Journal Article] Takuya Kawazu2015

    • Author(s)
      Electric states in laterally and vertically arrayed type-II quantum dots
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 54 Issue: 4S Pages: 04DJ01-04DJ01

    • DOI

      10.7567/jjap.54.04dj01

    • Related Report
      2014 Research-status Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Presentation] Photoinduced current in n-AlGaAs/GaAs heterojunction field-effect transistor driven by local illumination in edge regions of Schottky metal gate2016

    • Author(s)
      T. Kawazu, T. Noda, and Y. Sakuma
    • Organizer
      2016 International Conference on Solid State Devices and Materials (SSDM2016)
    • Place of Presentation
      Tsukuba, Japan
    • Year and Date
      2016-09-26
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Ga堆積速度およびSb分子線圧のGaSb量子ドット形成への影響2016

    • Author(s)
      川津 琢也、野田 武司、佐久間 芳樹
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ
    • Year and Date
      2016-09-13
    • Related Report
      2016 Annual Research Report
  • [Presentation] Effects of Ga deposition rate and antimony flux on morphology of GaSb quantum dots formed on GaAs2016

    • Author(s)
      Takuya Kawazu, Takeshi Noda, Yoshiki Sakuma, and Hiroyuki Sakaki
    • Organizer
      The 43rd International Symposium on Compound Semiconductor
    • Place of Presentation
      Toyama International Conference Center
    • Year and Date
      2016-06-26
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research
  • [Presentation] 微傾斜GaAs(111)B基板上に作製したGaSbタイプIIナノロッドの光学異方性2016

    • Author(s)
      川津 琢也、野田 武司、佐久間 芳樹、榊 裕之
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東工大 大岡山キャンパス
    • Year and Date
      2016-03-19
    • Related Report
      2015 Research-status Report
  • [Presentation] ショットキバリアゲート光照射によるn-AlGaAs/GaAs(001) ヘテロ接合チャネルの面内電流生成2015

    • Author(s)
      川津 琢也、野田 武司、佐久間 芳樹、榊 裕之
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場
    • Year and Date
      2015-09-13
    • Related Report
      2015 Research-status Report
  • [Presentation] GaSb/GaAs量子ドットの光学異方性における後熱処理の効果2015

    • Author(s)
      川津 琢也,野田武司,佐久間芳樹,榊 裕之
    • Organizer
      第62回応用物理学会(2015年春季)
    • Place of Presentation
      東海大学
    • Year and Date
      2015-03-13
    • Related Report
      2014 Research-status Report
  • [Presentation] 高指数面GaAs基板上のGaSbおよびAlSb量子ドットの成長2014

    • Author(s)
      川津 琢也,野田武司,間野高明,佐久間芳樹,榊 裕之
    • Organizer
      第75回応用物理学会(2014年秋季)
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-19
    • Related Report
      2014 Research-status Report
  • [Remarks] NIMSの研究者用データベース「SAMURAI」

    • URL

      http://samurai.nims.go.jp/

    • Related Report
      2016 Annual Research Report
  • [Remarks] NIMSの研究者用データベース「SAMURAI」

    • URL

      http://samurai.nims.go.jp/

    • Related Report
      2015 Research-status Report
  • [Remarks] NIMSの研究者情報データベース「SAMURAI」

    • URL

      http://samurai.nims.go.jp/

    • Related Report
      2014 Research-status Report

URL: 

Published: 2014-04-04   Modified: 2018-03-22  

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