Development of tunable wavelength filter chip with remarkable productivity and optical properties
| Project/Area Number |
26420298
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Utsunomiya University |
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Principal Investigator |
Yoda Hidehiko 宇都宮大学, 工学(系)研究科(研究院), 准教授 (30312862)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2014: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Keywords | 光波長フィルタ / 光デバイス / 透明ヒータ膜 |
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| Outline of Final Research Achievements |
In future optical access network based on WDM-PON, wavelength-tunable narrow bandpass filters (BPFs) are required for colorless optical network units. Tunable BPFs using a-Si:D/SiOx multilayer have simple structure, high productivity, narrow bandpass (0.8 nm), and wide tuning range (30 nm). The tunable BPF is based on thermo-optic effect in thin film of amorphous silicon. In fabrication, a-Si:D/SiOx multilayer was deposited using RF magnetron sputtering. A heating layer of ITiO film was formed on the multilayer in advance. The BPF chip size was 2x2 mm and 0.05 mmt. When current is applied to the heater layer, both temperature and selective wavelength of the BPF increase. We measured the center wavelength of the BPF chip when the power consumption at the heating layer was varied. The power of 0.3 W was used for the wavelength shift of +20 nm. It is noteworthy that the power required for the wavelength shift of +30 nm can be reduced to 0.45 W.
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Report
(4 results)
Research Products
(14 results)
