| Project/Area Number |
26420299
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Okinawa National College of Technology (2015-2016)
Chiba University (2014) |
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Principal Investigator |
Fujii Satoshi 沖縄工業高等専門学校, 情報通信システム工学科, 教授 (30598933)
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| Co-Investigator(Renkei-kenkyūsha) |
HASHIMOTO KENYA 千葉大学, 工学研究科, 教授 (90134353)
OMORI TATSUYA 千葉大学, 工学研究科, 助教 (60302527)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2016: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2015: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2014: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | 弾性表面波 / 圧電薄膜 / ダイヤモンド / マイクロ波工学 / ScAlN薄膜 / RFマグネトロンスパッタ / SAW / 電気機械結合係数 / マグネトロン / 位相ノイズ / ScAlN / RFスパッタリング / ラマン分光 / SAWフィルタ / スパッタリング |
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| Outline of Final Research Achievements |
ScAlN thin films were deposited by a conventional radiofrequency (RF)-magnetron sputtering system using two Sc-Al alloy metal targets with different Sc/Al ratios. A 10 h deposition time resulted in highly c-axis-oriented ScAlN thin films with Sc concentrations of 32 at% and 22 at% on Sc0.43-Al0.57 and Sc0.32-Al0.68 targets, respectively. C-axis orientation was lost in thin films deposited on the Sc0.43-Al0.57 target after sputtering times of over 50 h. XDS analysis showed a high-Sc-content ScAlN film with an amorphous phase layer near the Si substrate surface. A seed layer of c-axis-oriented ScAIN allowed for > 50 h deposition on the Sc0.43-Al0.57 target to result in highly c-axis-oriented ScAlN films. A one-port surface acoustic wave (SAW) resonator based on the ScAlN/Si structure has a K2 value of 2.7% at 2 GHz, six times larger than for that based on the AlN/Si structure.
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