| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2015: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
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| Outline of Final Research Achievements |
We have realized a quantum dot-gained, evenescently waveguide-coupled hybrid silicon laser. This device comprises a InAs quantum dot optical gain medium and silicon waveguides, and has been fabricated via wafer bonding and layer transfer. We have then achieved the world's higest-temperature operation by utilizing high-performance semiconductor quantum dots, while the earlier hybrid silicon lasers used quantum wells as gain media. Our result is an important step in the development of high-density photonic integrated circuits, which particularly requires high temperature stability, towards the realization of next-generation high-speed, large-volume, low-power-consumption communication and telecommunication.
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