Development of III-V quantum dot / silicon evenescent hybrid lasers
Project/Area Number |
26420300
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Multi-year Fund |
Section | 一般 |
Research Field |
Electron device/Electronic equipment
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Research Institution | Kyoto University (2015-2016) The University of Tokyo (2014) |
Principal Investigator |
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Project Period (FY) |
2014-04-01 – 2017-03-31
|
Project Status |
Completed (Fiscal Year 2016)
|
Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2015: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
|
Keywords | 光集積回路 / 光通信 / 半導体レーザ / シリコン / ウェハ貼り合わせ / 量子ドット / 光電子集積回路 / シリコンフォトニクス |
Outline of Final Research Achievements |
We have realized a quantum dot-gained, evenescently waveguide-coupled hybrid silicon laser. This device comprises a InAs quantum dot optical gain medium and silicon waveguides, and has been fabricated via wafer bonding and layer transfer. We have then achieved the world's higest-temperature operation by utilizing high-performance semiconductor quantum dots, while the earlier hybrid silicon lasers used quantum wells as gain media. Our result is an important step in the development of high-density photonic integrated circuits, which particularly requires high temperature stability, towards the realization of next-generation high-speed, large-volume, low-power-consumption communication and telecommunication.
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Report
(4 results)
Research Products
(9 results)
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[Journal Article] A hybrid silicon evanescent quantum dot laser2016
Author(s)
B. Jang, K. Tanabe, S. Kako, S. Iwamoto, T. Tsuchizawa, H. Nishi, N. Hatori, M. Noguchi, T. Nakamura, K. Takemasa, M. Sugawara, and Y. Arakawa
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Journal Title
Applied Physics Express
Volume: 9
Issue: 9
Pages: 092102-092102
DOI
NAID
Related Report
Peer Reviewed
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