| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2016: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2015: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2014: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Outline of Final Research Achievements |
The fabrication method of GaN-based resonant tunneling diodes (GaN-based RTDs) was established to realize the high-performance terahertz oscillators utilizing wide-bandgap semiconductors. The mechanism for the bistability of GaN-based RTDs, which causes the hysteresis in the current-voltage characteristics, was clarified by realizing higher quality of GaN-based RTDs and higher precision of numerical simulations. The bistability of GaN-based RTDs, which hinders their terahertz oscillation, was successfully suppressed by the improvements based on the clarified mechanism, and the possibility of the realization of terahertz oscillators utilizing GaN-based RTDs was shown.
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