Fabrication of GaN-based resonant tunneling diodes and investigation of their terahertz oscillation
| Project/Area Number |
26420332
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
NAGASE Masanori 国立研究開発法人産業技術総合研究所, 電子光技術研究部門, 主任研究員 (80399500)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2016: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2015: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2014: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Keywords | 窒化物半導体 / 共鳴トンネルダイオード / テラヘルツ波 / 双安定性 / 窒化ガリウム / サブバンド間遷移 / 双安定性メカニズム / 集積型アンテナ |
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| Outline of Final Research Achievements |
The fabrication method of GaN-based resonant tunneling diodes (GaN-based RTDs) was established to realize the high-performance terahertz oscillators utilizing wide-bandgap semiconductors. The mechanism for the bistability of GaN-based RTDs, which causes the hysteresis in the current-voltage characteristics, was clarified by realizing higher quality of GaN-based RTDs and higher precision of numerical simulations. The bistability of GaN-based RTDs, which hinders their terahertz oscillation, was successfully suppressed by the improvements based on the clarified mechanism, and the possibility of the realization of terahertz oscillators utilizing GaN-based RTDs was shown.
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Report
(4 results)
Research Products
(8 results)
