| Project/Area Number |
26420671
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Physical properties of metals/Metal-base materials
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| Research Institution | Japan Fine Ceramics Center |
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Principal Investigator |
KATO Takeharu 一般財団法人ファインセラミックスセンター, その他部局等, 主任研究員 (90399600)
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| Co-Investigator(Kenkyū-buntansha) |
横江 大作 一般財団法人ファインセラミックスセンター, その他部局等, 技師 (20590079)
吉田 竜視 一般財団法人ファインセラミックスセンター, その他部局等, 技師 (50595725)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2016: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2014: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Keywords | 電位分布 / ショットキー障壁 / 金属／半導体 / 空乏層 / 電子線ホログラフィー / 金属/半導体界面 / FIB / 電位分布解析 / 界面構造解析 / 半導体的性質 |
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| Outline of Final Research Achievements |
In order to apply electric voltage to the interface between the metals and semiconductors, supports of TEM samples composed of an alumina plate and titanium foils was fabricated. Samples including the interface between the metals and semiconductors were fixed on the edge of the supports. We developed TEM sample preparation technique with uniform thickness and no damage, and electrical wiring technique applying electrical voltage to the interface between the metals and the semiconductors. Current-voltage characteristics were measured from the above TEM samples applying the forward bias or reversed bias. The relationships between the applying voltages and the thickness of depletion layers could be clarified using electron holography, which could indicate the potential distribution in the semiconductors at the vicinity of the metals interface.
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