| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2016: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2015: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Outline of Final Research Achievements |
The present study was conducted to solve two issues related to contact electrode formation of wide band-gap semiconductors, which are the candidates for the next-generation power electronic devices. One was the formation of low resistance contact electrode on p-type GaN. In order to activate acceptor dopants of GaN in the vicinity of the electrodes, a method to enhance hydrogen-atoms evacuation by applying voltage during annealing was developed and its effect was demonstrated. The other issue was to improve the mechanical properties retaining the good electrical properties of Ni-based electrodes on n-type SiC. The mechanical properties are improved by suppressing the reaction producing free-carbon. The harmful reaction was successfully replaced by TiC formation reaction.
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