| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2016: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2015: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Outline of Final Research Achievements |
In this study, stress relaxation characteristics and fatigue crack propagation characteristics of sintered Ag nanoparticles were measured by original miniature specimens. As a result, stress relaxation due to characteristic low-temperature creep is developed up to the sintering temperature of 573 K. This creep is governed by the grain boundary structure peculiar to the Ag sintered body and the diffusion at the boundary. On the other hand, fatigue crack propagation characteristics improved with increasing sintering temperature, and at a sintering temperature of 573 K, the sintering temperature is lower than the low sintering temperature of 423 K. From these results, it was revealed that the joint structure having good fatigue reliability and ability of protecting the semiconductor from thermal stress by the relaxation could be obtained when Ag nanoparticles are sintered at 573 K.
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