| Project/Area Number |
26420727
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Structural/Functional materials
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| Research Institution | Osaka Prefecture University |
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Principal Investigator |
Nakamura Ryusuke 大阪府立大学, 工学(系)研究科(研究院), 准教授 (70396513)
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| Co-Investigator(Renkei-kenkyūsha) |
ISHIMARU Manabu 九州工業大学, 大学院工学研究科, 教授 (00264086)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2016: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2015: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2014: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | アモルファスゲルマニウム / 結晶化 / ナノポーラス構造 / ナノポーラス / 構造解析 / アモルファス / ゲルマニウム / ナノポーラス構造制御 |
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| Outline of Final Research Achievements |
An attempt to manipulate nanoporous (NP) structure of crystalline germanium films was made by using accumulation of amounts of point defects, which are intrinsically contained in amorphous Ge (a-Ge) films. When a-Ge films prepared by sputtering were annealed at a constant rate in TEM, they crystallized at 500℃. The microstructure is composed of coarse particles with the diameter of 100 nm and void network. The crystal structure is hexagonal. On the other hand, when a-Ge films were pre-annealed at 350℃ for a couple of hours and subsequently annealed at higher temperature, they crystallized at 600℃ to be the diamond cubic structure. The microstructure is composed of fine particles and isolated spherical voids, both with the diameter around 5 nm. NP structure is governed by the crystallization behavior of a-Ge, which varies from state to state of amorphous structure. The control of atomic-level structure of a-Ge is crucial to that of NP structure of crystalline germanium.
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