| Project/Area Number |
26420738
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Material processing/Microstructural control engineering
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| Research Institution | Osaka University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
SETSUHARA Yuichi 大阪大学, 接合科学研究所, 教授 (80236108)
UCHIDA Giichiro 大阪大学, 接合科学研究所, 准教授 (90422435)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | 酸化亜鉛 / ミストCVD / 大気圧非平衡プラズマ / 透明導電膜 |
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| Outline of Final Research Achievements |
Development of zinc oxide thin film formation technology by atmospheric pressure non-equilibrium plasma assist have been studied. First, the reaction at plasma liquid interface when atmospheric pressure non-equilibrium plasma was applied to liquid have been investigated, suggesting that OH radicals are produced by the decomposition reaction of water by plasma, which may contribute to oxidation. In order to obtain information concerning the control of surface structure of zinc oxide films, the influence of surface structure by mist size supplied to plasma has been investigated. A hemispherical structure has been observed on the ZnO film surfaces. The result inhibit that the hemispherical structure depends on the mist size supplied to the plasma, and the hemispherical structure generated changes from the vaporization rate of the solvent in the plasma.
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