| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2015: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2014: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Outline of Final Research Achievements |
III-V compound semiconductors have attracted attention as next-generation materials and potential alternatives to silicon-based semiconductors. In this study, we fabricated self-aligned GaAs nanowire arrays by the anodic etching of n-type GaAs (111)B using neither a mask nor a catalyst. Furthermore, we demonstrated the field-emission properties of the GaAs nanowires. Concerning the conditions of fabrication process without applying an external bias, we demonstrated that ordered nanopillar arrays with a periodicity of 100 nm can be fabricated on GaAs substrates using metal-assisted chemical etching with a patterned Au catalyst. The effects of etchant composition and etching time on the morphology of the etched GaAs substrate were also investigated. A natural lithographic approach based on the structural feature of spontaneously generated patterns will offer a new route to the fundamental study of the fabrication of ordered surfaces over large area.
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