| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2016: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2014: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Outline of Final Research Achievements |
For improving the integration density of ferroelectric random access memory, fabrication of ferroelectric film onto 3-dimensional features with high growth rate and high conformality is mandatory. We therefore studied supercritical fluid deposition (SCFD). Via quantitative evaluation of its reaction kinetics and transport properties, TiO2 deposition with high growth rate and high conformality was achieved. Then, deposition of Bi4Ti3O12 (BiT) was enabled by adding a Bi precursor to TiO2-SCFD, in which BiT film formation with uniform film thickness and chemical composition was successful onto high-aspect-ratio features. We then studied SCFD of RuO2 for electrode formation and post-anneal of BiT to improve its crystallinity, and thereby achieved the stacked layer structure composed of BiT and RuO2 onto high-aspect-ratio features.
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