| Project/Area Number |
26600049
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Nanomaterials engineering
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
Fukata Naoki 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, グループリーダー (90302207)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2014: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | 結晶成長 / シリコン / 多結晶 / 太陽電池 / 結晶工学 / 多結晶薄膜 / ナノワイヤ |
|---|
| Outline of Final Research Achievements |
The purpose of this study is to form crystalline Si layer on foreign substrates. To realize this, Si crystal growth on quartz substrates was carried out by using aluminum induced crystallization (AIC). The characterizations were done by transmission electron microscope (TEM), electron backscattering diffraction (EBSD), and Raman spectroscopy. The orientation fraction and grain size were controlled by modulating the annealing temperature and sample thickness. We successfully formed (111)-orientated grains up to 0.384 mm in size at a rate of 99% in a 50 nm-thick sample annealed at 673-1003 K. Furthermore, the real applications of AIC poly-Si as a growing template were demonstrated through silicon thin-film and nanowire formations.
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