| Project/Area Number |
26600056
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Nano/Microsystems
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| Research Institution | Tohoku University |
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Principal Investigator |
Tanaka Shuji 東北大学, 工学(系)研究科(研究院), 教授 (00312611)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2014: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | 高温センサ / 信号読出し / SiCダイオード / ブリッジ回路 / 高温実装技術 / MEMS / ダイオードブリッジ / 容量型センサ / 炭化ケイ素 / ダイオード / センサ読出回路 |
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| Outline of Final Research Achievements |
A readout technology of capacitive MEMS sensors installed in high temperature (several hundred degree C) environments was developed. A heat-resistive capacitive MEMS sensor, a SiC diode bridge and coupling capacitors are installed in a high temperature environment, and connected to a Si-based signal processing circuit installed in a low temperature environment by an extension wire.
Pn-junction SiC diodes were metalized with Pt and successfully tested at 400-600 degree C. The diode characteristics were obtained at different temperatures. Special high-temperature Jisso technology including die bonding and wire bonding was developed. Based on this technology, a SiC diode bridge circuit was constructed and successfully tested at high temperature. In addition, SiC microfabrication technology was studied, and a fundamental sensor structure was fabricated.
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