| Project/Area Number |
26600081
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Applied materials
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
Mori Takahiro 国立研究開発法人産業技術総合研究所, ナノエレクトロニクス研究部門, 研究員 (70443041)
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| Research Collaborator |
NINOMIYA Naruki
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2015: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2014: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | 二次元層状物質 / 発光素子 / トランジスタ / 絶縁膜界面 / 遷移金属ダイカルコゲナイド / 二硫化モリブデン / 電界効果トランジスタ / 励起子発光 / 固定電荷 |
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| Outline of Final Research Achievements |
This research aims to develop high-efficiency laser diode with two-dimensional layered atomically thin films. We intended to utilize emission from excitons bound to fixed charge at film/insulator interface in order to realize high-efficiency light emission. Molybdenum disulfide, which is the representative of two-dimensional layered transition metal dichalcogenides, was utilized in this work. For the interface diagnostics, the electrical characterization was performed with fabricated transistors. We observed strong light emission in photoluminescence measurements; however, we were not able to clarify fixed charge at the interface. This is because our electrical characterization could not distinguish the fixed charge at the interface with charged impurity in the material. For accomplishing the objective of this work, the charged impurity in the material should be reduced in the future projects.
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