| Project/Area Number |
26600082
|
|---|
| Research Category |
Grant-in-Aid for Challenging Exploratory Research
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Crystal engineering
|
|---|
| Research Institution | Osaka University (2016)
Tohoku University (2014-2015) |
|---|
Principal Investigator |
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
横山 弘之 東北大学, 未来科学技術共同研究センター, 教授 (60344727)
窪谷 茂幸 東北大学, 金属材料研究所, 助教 (70583615)
谷川 智之 東北大学, 金属材料研究所, 講師 (90633537)
|
|---|
| Project Period (FY) |
2014-04-01 – 2017-03-31
|
| Project Status |
Completed (Fiscal Year 2016)
|
| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2016: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2015: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
|
|---|
| Keywords | 非線形光学 / 第二高調波発生 / 窒化アルミニウム / 酸化ジルコニウム / パルスレーザ堆積 / 反応性スパッタリング / 光導波路 / パルスレーザー堆積 |
|---|
| Outline of Final Research Achievements |
Despite the strong needs for the semiconductor lithography and medical applications, still the semiconductor laser with a deep-UV emission has never been realized. In this work, novel methods for emitting deep-UV has been proposed, via the second harmonic generation in UV regime, pumped by blue laser diodes, based on the wavelength conversion process taking advantage of strong optical nonlinearity in AlN. Also, the elemental technologies for the device fabrication, design as well as the optical investigation have been developed.
|
