Fabrication of Si-LSI compatible Ge nanowires for ultra-high-speed transistors
| Project/Area Number |
26600083
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Crystal engineering
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| Research Institution | University of Tsukuba |
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Principal Investigator |
TOKO Kaoru 筑波大学, 数理物質系, 助教 (30611280)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2015: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
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| Keywords | ナノワイヤ / ゲルマニウム / 結晶成長 |
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| Outline of Final Research Achievements |
This study proposes a way to fabricate Ge nanowires (NWs) on insulators at low temperature for improving Si-LSIs. We merged “Al-induced crystallization” growing a (111)-oriented Ge thin film and “Vapor-Liquid-Solid growth” fabricating Ge-NWs on single-crystal substrates. As a result, we successfully synthesized vertically aligned Ge-NWs on a SiO2 substrate and even on a plastic film. This is the first accomplishment allowing semiconductor NWs to be aligned on insulating substrates.
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Report
(4 results)
Research Products
(9 results)
