Fabrication of Si-LSI compatible Ge nanowires for ultra-high-speed transistors

• Project/Area Number: 26600083
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Crystal engineering
• Research Institution: University of Tsukuba
• Principal Investigator: TOKO Kaoru 筑波大学, 数理物質系, 助教 (30611280)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Project Status: Completed (Fiscal Year 2016)
• Budget Amount: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000); Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2015: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
• Keywords: ナノワイヤ / ゲルマニウム / 結晶成長

Outline of Final Research Achievements

This study proposes a way to fabricate Ge nanowires (NWs) on insulators at low temperature for improving Si-LSIs. We merged “Al-induced crystallization” growing a (111)-oriented Ge thin film and “Vapor-Liquid-Solid growth” fabricating Ge-NWs on single-crystal substrates. As a result, we successfully synthesized vertically aligned Ge-NWs on a SiO2 substrate and even on a plastic film. This is the first accomplishment allowing semiconductor NWs to be aligned on insulating substrates.

Research Products

• [Journal Article] Transfer-free synthesis of highly ordered Ge nanowire arrays on glass substrate (2015)
  • Author(s): M. Nakata, K. Toko, W. Jevasuwan, N. Fukata, N. Saitoh, N. Yoshizawa, and T. Suemasu
  • Journal Title: Applied Physics Letters Volume: 107 Issue: 13 Pages: 133102-133102
  • DOI: 10.1063/1.4932054
  • NAID: 120007135961
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Vertically Aligned Ge Nanowires on Flexible Plastic Films Synthesized by (111)-Oriented Ge Seeded Vapor－Liquid－Solid Growth (2015)
  • Author(s): K. Toko, M. Nakata, W. Jevasuwan, N. Fukata, and T. Suemasu
  • Journal Title: ACS Applied Materials ＆ Interfaces Volume: 7 Issue: 32 Pages: 18120-18124
  • DOI: 10.1021/acsami.5b05394
  • Peer Reviewed / Acknowledgement Compliant
• [Presentation] SiGe薄膜の低温合成技術と熱電変換への応用 (2016)
  • Author(s): 都甲薫、山本淳、末益崇
  • Organizer: 応用物理学会シリコンテクノロジー分科会研究集会
  • Place of Presentation: 産業技術総合研究所（茨城県つくば市）
  • Year and Date: 2016-11-14
  • Invited
• [Presentation] IV族半導体薄膜の金属誘起層交換成長 ―現象の理解と制御― (2016)
  • Author(s): 都甲薫、末益崇
  • Organizer: 第8回半導体材料・デバイスフォーラム
  • Place of Presentation: くまもと県民交流館パレア（熊本県熊本市）
  • Year and Date: 2016-11-05
  • Invited
• [Presentation] Highly (111)-oriented Ge on insulators formed by Al-induced crystallization leading to vertically aligned Ge nanowires (2016)
  • Author(s): M. Nakata, K. Toko, W. Jevasuwan, N. Fukata, and T. Suemasu
  • Organizer: ICCGE-18
  • Place of Presentation: 名古屋国際会議場（愛知県名古屋市）
  • Year and Date: 2016-08-11
  • Int'l Joint Research
• [Presentation] プラスチック上Ge薄膜の結晶方位制御と垂直配向ナノワイヤ合成 (2016)
  • Author(s): 都甲 薫、中田 充紀、大谷 直生、Jevasuwan Wipakorn、深田 直樹, 末益 崇
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学（東京都目黒区）
  • Year and Date: 2016-03-20
• [Presentation] Fabrication of Vertical Ge Nanowires on Amorphous Substrates by Combining Au-seeded Chemical-Vapor Deposition with Al-induced Crystallization (2015)
  • Author(s): M. Nakata, K. Toko, W. Jevasuwan, N. Fukata, and T. Suemasu
  • Organizer: 2015 International Conference on Solid State Devices and Materials (SSDM 2015)
  • Place of Presentation: 北海道大学（北海道札幌市）
  • Year and Date: 2015-09-30
  • Int'l Joint Research
• [Presentation] Ge(111)薄膜を利用したガラス上Geナノワイヤの均一合成 (2015)
  • Author(s): 中田 充紀、都甲 薫、Jevasuwan Wipakorn、深田 直樹、末益 崇
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学（神奈川）
  • Year and Date: 2015-03-11
• [Remarks] 研究室HP
  • URL: http://www.bk.tsukuba.ac.jp/~ecology/