| Project/Area Number |
26600089
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Crystal engineering
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| Research Institution | Meijo University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
丸山 隆浩 名城大学, 理工学部, 教授 (30282338)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2016: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2015: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2014: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | 液相成長 / 窒化ガリウム / 流速支援 / 回転攪拌 / メサ加工基板 / マイクロチャンネルエピタキシー / 転位低減化 / 横方向成長 / テンプレート基板 / 縦方向成長抑制 / 回転撹拌 / 転位低減 |
|---|
| Outline of Final Research Achievements |
In order to realize flow-assisted-mode liquid phase epitaxy of GaN, the following processes were pursuit; design and trial fabrication of boat by the aide of 3D printer, modification of normal LPE system, optimization of growth conditions. With mechanically generated a convection in the solution by a rotating wheel, it was succeeded in a very flat and uniform growth of GaN layer with the growth rate of 0.5 um/h under atmospheric pressure without using any additives in the solution. At the same time, we have succeeded in a very-flat lateral growth of c-plane GaN by liquid phase electro epitaxy by using mesa-shaped GaN template substrate. The growth of the very-wide and flat GaN layer was successfully obtained to combine the adjoining laterally grown layers.
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