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Dislocation passivation in InGaN by intentinally using immiscible nature during MBE growth by DERI method

Research Project

Project/Area Number 26600090
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeMulti-year Fund
Research Field Crystal engineering
Research InstitutionRitsumeikan University

Principal Investigator

NANISHI YASUSHI  立命館大学, 理工学部, 授業担当講師 (40268157)

Co-Investigator(Kenkyū-buntansha) 荒木 努  立命館大学, 理工学部, 教授 (20312126)
Co-Investigator(Renkei-kenkyūsha) SUDA Jun  京都大学, 大学院工学研究科, 准教授 (00293887)
AKASAKA Tetsuya  日本電信電話株式会社, NTT物性科学基礎研究所・機能物質科学研究部, 主任研究員 (90393735)
YAMAGUCHI Tomohiro  工学院大学, 先進工学部, 准教授 (50454517)
Project Period (FY) 2014-04-01 – 2017-03-31
Project Status Completed (Fiscal Year 2016)
Budget Amount *help
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2016: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2015: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2014: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
KeywordsInN / InGaN / 窒化物半導体 / 混晶組成 / 極微領域評価 / MBE / 転位 / リーク電流 / 不活性化
Outline of Final Research Achievements

InGaN alloys are currently widely used as active layers of blue LEDs. Optical and electronic characteristics are degraded dramatically, however, when we increase In composition to fabricate green, red and infra-red LEDs due to generation of dislocations. In this study, we tried to suppress this dislocation effect by using DERI method, newly developed RF-MBE growth method by us, for high quality InN growth. Intentionally utilizing immiscible nature of InGaN alloys, we grew Ga-rich InGaN surrounding dislocations with wider bandgap. It was found that leakage current due to dislocation was suppressed as expected by conductive AFM measurements.

Report

(4 results)
  • 2016 Annual Research Report   Final Research Report ( PDF )
  • 2015 Research-status Report
  • 2014 Research-status Report
  • Research Products

    (51 results)

All 2017 2016 2015 2014

All Journal Article (8 results) (of which Int'l Joint Research: 2 results,  Peer Reviewed: 8 results,  Open Access: 6 results) Presentation (43 results) (of which Int'l Joint Research: 24 results,  Invited: 7 results)

  • [Journal Article] Influence of Defects and Indium Distribution on Emission Properties of Thick In-Rich InGaN Layers Grown by the DERI Technique2017

    • Author(s)
      D. Dobrovolskas, J. Mickevicius, S. Nargelas, A. Vaitkevicius, Y. Nanishi, T. Araki, G. Tamulaitis
    • Journal Title

      Semiconductor Science and Technology

      Volume: 32 Issue: 2 Pages: 025012-025012

    • DOI

      10.1088/1361-6641/32/2/025012

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Surface and Bulk Electronic Structures of Heavily Mg-doped InN Epilayer by Hard X-ray Photoelectron Spectroscopy2017

    • Author(s)
      M. Imura, S. Tsuda, T. Nagata, R. G. Banal, H. Yoshikawa, A. Yang, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
    • Journal Title

      J. Appl. Phys.

      Volume: 121 Issue: 9 Pages: 095703-095703

    • DOI

      10.1063/1.4977201

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Optical properties of Ga<sub>0.82</sub>In<sub>0.18</sub>N <i>p</i>-<i>n</i> homojunction blue-green light-emitting-diode grown by radio-frequency plasma-assisted molecular beam epitaxy2015

    • Author(s)
      T. Onuma, K. Narutani, S. Fujioka, T. Yamaguchi, K. Wang, T. Araki, Y. Nanishi, L. Sang, M. Sumiya and T. Honda
    • Journal Title

      Transactions of the Materials Research Society of Japan

      Volume: 40 Issue: 2 Pages: 149-152

    • DOI

      10.14723/tmrsj.40.149

    • NAID

      130005089534

    • ISSN
      1382-3469, 2188-1650
    • Related Report
      2015 Research-status Report
    • Peer Reviewed
  • [Journal Article] InN NanoColumns Grown by Molecular Beam Epitaxy and Their Luminescence Properties2015

    • Author(s)
      K. Wang, T. Araki, T. Yamaguchi, Y.T. Chen, E. Yoon, Y. Nanishi
    • Journal Title

      Journal of Crystal Growth

      Volume: 430 Pages: 93-97

    • DOI

      10.1016/j.jcrysgro.2015.07.027

    • Related Report
      2015 Research-status Report
    • Peer Reviewed
  • [Journal Article] Effect of Mg doping on the structural and free-charge carrier properties of InN films2014

    • Author(s)
      M.-Y. Xie, N. Ben Sedrine, S. Schöche, T. Hofmann, M. Schubert, L. Hung, B. Monemar, X. Wang, A. Yoshikawa, K. Wang, T. Araki, Y. Nanishi and V. Darakchieva
    • Journal Title

      J. Appl. Phys

      Volume: 115 Issue: 16 Pages: 163504-163504

    • DOI

      10.1063/1.4871975

    • Related Report
      2014 Research-status Report
    • Peer Reviewed / Open Access
  • [Journal Article] Radio-Frequency Plasma-Excited Molecular Beam Epitaxy Growth of GaN on Graphene/Si(100) Substrates2014

    • Author(s)
      T. Araki, S. Uchimura, J. Sakaguchi, Y. Nanishi, T. Fujishima, A. Hsu, K. Kim, T. Palacios,
    • Journal Title

      Applied Physics Express

      Volume: 7 Issue: 7 Pages: 071001-071001

    • DOI

      10.7567/apex.7.071001

    • NAID

      210000137149

    • Related Report
      2014 Research-status Report
    • Peer Reviewed / Open Access
  • [Journal Article] Free-Charge Carrier Parameters of N-Type, P-Type and Compensated InN:Mg Determined by Infrared Spectroscopic Ellipsometry2014

    • Author(s)
      S. Schoche, T. Hofmann, V. Darakchieva, X. Wang, A. Yoshikawa, K. Wang, Y. Nanishi, M. Schubert,
    • Journal Title

      Thin Solid Films

      Volume: 571 Pages: 384-388

    • DOI

      10.1016/j.tsf.2014.01.051

    • Related Report
      2014 Research-status Report
    • Peer Reviewed / Open Access
  • [Journal Article] Effects of TMSb Overpressure on InSb Surface Morphology for InSb Epitaxial Growth Using Low Pressure Metalorganic Chemical Vapor Deposition2014

    • Author(s)
      S. Park, J. Jung, C. Seok, K. Shin, S. Park, Y. Nanishi, Y. Park, E. Yoon
    • Journal Title

      Journal of Crystal Growth

      Volume: 401 Pages: 518-522

    • DOI

      10.1016/j.jcrysgro.2013.10.062

    • Related Report
      2014 Research-status Report
    • Peer Reviewed / Open Access
  • [Presentation] Evaluation of Nitride Semiconductors Using Terahertz Time-Domain Spectroscopic Ellipsometry2017

    • Author(s)
      T. Araki, K. Tachi, K. Morino, S. Asagami, T. Fujii, Y. Nanishi, T. Nagashima, T. Iwamoto, Y. Sato, N. Morita, R. Sugie, S. Kamiyama
    • Organizer
      The 5th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA '17)
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-04-20
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] RF-MBE法によるグラファイト上へのInN成長2017

    • Author(s)
      荒川真吾、久保中湧士、毛利真一郎、荒木努、名西やす之
    • Organizer
      2017年春季第64回応用物理学会学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-17
    • Related Report
      2016 Annual Research Report
  • [Presentation] THzエリプソメトリーによるInN薄膜の電気的特性測定に関する検討2017

    • Author(s)
      森野 健太,達 紘平,藤井 高志,毛利 真一郎,荒木 努,名西 やす之,長島 健,岩本 敏志,佐藤 幸徳
    • Organizer
      2017年春季第64回応用物理学会学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-16
    • Related Report
      2016 Annual Research Report
  • [Presentation] DERI法を用いたサファイア上N極性InN成長2017

    • Author(s)
      久保中 湧士,毛利真一郎,荒木 努,名西 やす之
    • Organizer
      2017年春季第64回応用物理学会学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] TEM Study of InN Films Grown with In-situ Surface Reformation by Radical Beam Irradiation2017

    • Author(s)
      Faizulsalihin bin Abas,Nur Liyana binti Zainol Abidin,藤田 諒一,毛利 真一郎,荒木 努,名西 やす之
    • Organizer
      2017年春季第64回応用物理学会学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] Nラジカルビーム照射によるin-situ表面改質のInN成長への効果2017

    • Author(s)
      藤田諒一,Faizulsalihin bin Abas,Nur Liyana binti Zainol Abidin,毛利真一郎,荒木努,名西やす之
    • Organizer
      2017年春季第64回応用物理学会学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] α-Ga2O3の表面バンドベンディングの評価2017

    • Author(s)
      藤木嘉樹, 城川潤二郎, 荒木努, 名西やす之, 織田真也
    • Organizer
      2017年春季第64回応用物理学会学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] In-Situ Monitoring in RF-MBE Growth of In-Based Nitrides2016

    • Author(s)
      T. Yamaguchi, T. Sasaki, M. Takahashi, T. Araki, T. Onuma, T. Honda, Y. Nanishi
    • Organizer
      15th International Symposium on Advanced Technology
    • Place of Presentation
      Tainan City (Taiwan)
    • Year and Date
      2016-11-10
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Characterization of Electrical Properties of n-type GaN Layer Using Terahertz Time-Domain Spectroscopic Ellipsometry2016

    • Author(s)
      K. Tachi, S. Asagami, T. Fujii, T. Nagashima, T. Iwamoto, Y. Sato, N. Morita, R. Sugie, S. Kamiyama, T. Araki and Y. Nanishi
    • Organizer
      International Workshop on Nitride Semiconductor 2016 (IWN2016)
    • Place of Presentation
      Orlando, Florida (USA)
    • Year and Date
      2016-10-05
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Surface and Bulk Electronic Structures of Heavily Mg-doped InN Epilayer by Hard X-ray Photoelectron Spectroscopy2016

    • Author(s)
      M. Imura, S. Tsuda, T. Nagata, A. Yang, Y. Yamashita, H. Yoshikawa, Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
    • Organizer
      International Workshop on Nitride Semiconductor 2016 (IWN2016)
    • Place of Presentation
      Orlando, Florida (USA)
    • Year and Date
      2016-10-04
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Atomic Level C-AFM Characterization of GaN Grown Under Spiral Mode2016

    • Author(s)
      K. Komura, T. Araki, Y. Nanishi, T. Akasaka
    • Organizer
      International Workshop on Nitride Semiconductor 2016 (IWN2016)
    • Place of Presentation
      Orlando, Florida (USA)
    • Year and Date
      2016-10-04
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Study on Microstructure and Thermal Stability of Rf-Plasma Nitridated α-(AlGa)2O3 Grown by Mist-CVD2016

    • Author(s)
      A. Buma, N. Masuda, T. Araki, Y. Nanishi, M. Oda, T. Hitora
    • Organizer
      International Workshop on Nitride Semiconductor 2016 (IWN2016)
    • Place of Presentation
      Orlando, Florida (USA)
    • Year and Date
      2016-10-03
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] RF-MBE Growth of GaInN Ternary Alloys Using in-situ Monitoring Techniques2016

    • Author(s)
      T. Yamaguchi, T. Sasaki, M. Takahashi, T. Araki, T. Onuma, T. Honda and Y. Nanishi
    • Organizer
      2016 International Conference on Solid State Devices and Materials
    • Place of Presentation
      つくば国際会議場(茨城県・つくば市)
    • Year and Date
      2016-09-28
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] フッ素プラズマによるInNの表面電荷蓄積層の影響軽減に関する研究2016

    • Author(s)
      福島駿介 , 臼田知志 , 荒木努, 名西やす之
    • Organizer
      2016年秋季 第77回応用物理学会学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県・新潟市)
    • Year and Date
      2016-09-16
    • Related Report
      2016 Annual Research Report
  • [Presentation] Recent Advancements and Challenges of Growth of InN and In-rich InGaN by DERI Method2016

    • Author(s)
      Y. Nanishi, T. Yamaguchi and T. Araki
    • Organizer
      EMN Meeting on Epitaxy
    • Place of Presentation
      Budapest (Hungary)
    • Year and Date
      2016-09-07
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Study on Nitridation of α-(AlGa)2O3 Using Rf Plasma for AlGaN Growth2016

    • Author(s)
      A. Buma, N. Masuda, T. Araki, Y. Nanishi, M. Oda, T. Hitora
    • Organizer
      The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
    • Place of Presentation
      名古屋国際会議場(愛知県・名古屋市)
    • Year and Date
      2016-08-09
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Characterization of GaN Layer Using THz Ellipsometry and Its Verification by Cross-Sectional Observation2016

    • Author(s)
      K. Tachi, S. Asagami, T. Fujii, T. Nagashima, T. Iwamoto, Y. Sato, N. Morita, R. Sugie, S. Kamiyama, T. Araki and Y. Nanishi
    • Organizer
      The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
    • Place of Presentation
      名古屋国際会議場(愛知県・名古屋市)
    • Year and Date
      2016-08-09
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Strain Relaxation Analysis Using In-situ X-ray Reciprocal Space Mapping Measurements in RF-MBE Growth of GaInN2016

    • Author(s)
      T. Yamaguchi, T. Sasaki, M. Takahashi, T. Onuma, T. Honda, Y. Nanishi
    • Organizer
      The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
    • Place of Presentation
      名古屋国際会議場(愛知県・名古屋市)
    • Year and Date
      2016-08-09
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Characterization of β-Ga2O3 Single Crystal Based Schottky Barrier Diode2016

    • Author(s)
      Y. Fujiki, T. Araki, Y. Moon, A. Kim and Y. Nanishi
    • Organizer
      35th Electronic Materials Symposium
    • Place of Presentation
      ラフォーレ琵琶湖(滋賀県・守山市)
    • Year and Date
      2016-07-08
    • Related Report
      2016 Annual Research Report
  • [Presentation] Study on Nitridation of α-(AlGa)2O3 Using Rf Plasma for AlGaN Growth2016

    • Author(s)
      A. Buma, N. Masuda, M. Oda, T. Hitora, T. Araki and Y. Nanishi
    • Organizer
      35th Electronic Materials Symposium
    • Place of Presentation
      ラフォーレ琵琶湖(滋賀県・守山市)
    • Year and Date
      2016-07-07
    • Related Report
      2016 Annual Research Report
  • [Presentation] Fluorine Plasma Treatment on InN Films Grown by RF-MBE2016

    • Author(s)
      S. Fukushima, S. Usuda, T. Araki and Y. Nanishi
    • Organizer
      35th Electronic Materials Symposium
    • Place of Presentation
      ラフォーレ琵琶湖(滋賀県・守山市)
    • Year and Date
      2016-07-07
    • Related Report
      2016 Annual Research Report
  • [Presentation] Characterization of III-Nitride Semiconductors Using Electron-Beam-Induced-Current (EBIC) Measurement2016

    • Author(s)
      E. Oku, T. Araki and Y. Nanishi
    • Organizer
      35th Electronic Materials Symposium
    • Place of Presentation
      ラフォーレ琵琶湖(滋賀県・守山市)
    • Year and Date
      2016-07-07
    • Related Report
      2016 Annual Research Report
  • [Presentation] Recent Advancement of Growth of InN and In-rich InGaN by RF-MBE2016

    • Author(s)
      Y. Nanishi, T. Yamaguchi and T. Araki
    • Organizer
      45th International School on the Physics of Semiconducting Compounds
    • Place of Presentation
      Szczyrk (Poland),
    • Year and Date
      2016-06-20
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] RF-MBE法によるGaN/Sapphire上へのMgドーピングGaN成長2016

    • Author(s)
      藤田諒一, 松田雅大, 荒木努, 名西やす之
    • Organizer
      第8回窒化物結晶成長講演会
    • Place of Presentation
      京都大学(京都府・京都市)
    • Year and Date
      2016-05-09
    • Related Report
      2016 Annual Research Report
  • [Presentation] フッ素プラズマによるInNの表面電荷蓄積層の影響軽減に関する研究2016

    • Author(s)
      福島駿介,臼田知志,荒木努,名西やす之
    • Organizer
      第8回窒化物結晶成長講演会
    • Place of Presentation
      京都大学(京都府・京都市)
    • Year and Date
      2016-05-09
    • Related Report
      2016 Annual Research Report
  • [Presentation] THzエリプソメトリーによるn型GaN膜の電気的特性評価2016

    • Author(s)
      達紘平,浅上史歩,藤井高志,荒木努,名西やす之,長島健,岩本敏志,佐藤幸徳,森田直威,杉江隆一,上山智
    • Organizer
      第8回窒化物結晶成長講演会
    • Place of Presentation
      京都大学(京都府・京都市)
    • Year and Date
      2016-05-09
    • Related Report
      2016 Annual Research Report
  • [Presentation] Dislocation Passivation by Positive Usage of Phase Separation During InGaN Growth by DERI Method2015

    • Author(s)
      Y. Nanishi, T. Yamaguchi and T. Araki
    • Organizer
      Collaborative Conference on Crystal Growth (3CG)
    • Place of Presentation
      Hong Kong (China)
    • Year and Date
      2015-12-15
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] Dislocation Passivation by Positive Usage of Phase Separation During RF-MBE Growth of InGaN2015

    • Author(s)
      Y. Nanishi, T. Yamaguchi, and T. Araki,
    • Organizer
      The 3rd International Conference on Advanced Electromaterials (ICAE2015)
    • Place of Presentation
      Jeju (Korea)
    • Year and Date
      2015-11-18
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] RF-MBE Growth and Structural Characterization of InN on Mist-CVD-grownα-In2O3/Sapphire2015

    • Author(s)
      A. Buma, N. Masuda, T. Araki, Y. Nanishi, M. Oda, and T. Hitora
    • Organizer
      The 6th International Symposium on Growth of Ⅲ-nitrides,
    • Place of Presentation
      アクトシティ浜松(静岡県浜松市)
    • Year and Date
      2015-11-11
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research
  • [Presentation] Growth and Characterization of Thin InN Films Grown by RF-MBE2015

    • Author(s)
      A. Usuda, K. Komura, M. Aranami, T. Araki, and Y. Nanishi
    • Organizer
      The 6th International Symposium on Growth of Ⅲ-nitrides
    • Place of Presentation
      アクトシティ浜松(静岡県浜松市)
    • Year and Date
      2015-11-11
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research
  • [Presentation] Comprehensive Study on Inductively Coupled Plasma Reactive Ion Etching of GaN and InN2015

    • Author(s)
      K. Narutani, T. Yamaguchi, T. Araki, Y. Nanishi, T. Onuma and T. Honda
    • Organizer
      The 31st North American Conference on Molecular Beam Epitaxy (NAMBE 2015)
    • Place of Presentation
      Mayan Riviera (Mexico)
    • Year and Date
      2015-10-07
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research
  • [Presentation] In-situ X-ray Reciprocal Space Mapping Measurements in GaInN Growth on GaN by RF-MBE2015

    • Author(s)
      T. Yamaguchi, T. Sasaki, K. Narutani, M. Sawada, R. Deki, T. Onuma, T. Honda, M. Takahasi, Y. Nanishi
    • Organizer
      The 31st North American Conference on Molecular Beam Epitaxy (NAMBE 2015)
    • Place of Presentation
      Mayan Riviera (Mexico)
    • Year and Date
      2015-10-07
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research
  • [Presentation] Idea to Passivate Dislocations by Positive Usage of Phase Separation in InGaN2015

    • Author(s)
      Y. Nanishi, T. Yamaguchi, and T. Araki
    • Organizer
      Workshop on Frontier Photonic and Electronic Materials and Devices
    • Place of Presentation
      京都大学(京都府京都市)
    • Year and Date
      2015-07-14
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] The Role of Impurities in Raman Scattering of InN: from Thin Films to Nanowires2015

    • Author(s)
      N. Dom&egrave;nech-Amador, R. Cusc&oacute;, R. Calarco, T. Yamaguchi, Y. Nanishi, L.Art&uacute;s,
    • Organizer
      Compound Semiconductor Week 2015
    • Place of Presentation
      Santa Barbara(USA)
    • Year and Date
      2015-06-29
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research
  • [Presentation] Growth and Characterization of InN on α-In2O3/Sapphire by RF-MBE2015

    • Author(s)
      N. Masuda, A. Buma, T. Araki, Y. Nanishi, M. Oda, and T. Hitora,
    • Organizer
      The 7th Asia-Pacific Workshop on Widegap Semiconductors
    • Place of Presentation
      Seoul (Korea)
    • Year and Date
      2015-05-19
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research
  • [Presentation] Characterization of RF Plasma Nitridated α-(AlGa)2O3 for AlGaN Growth2015

    • Author(s)
      T. Araki, A. Buma, N. Masuda, M. Oda, T. Hitora, and Y. Nanishi
    • Organizer
      The 4th International Conference on Light-Emitting Devices and Their Industrial Applications
    • Place of Presentation
      パシフィコ横浜(神奈川県横浜市)
    • Year and Date
      2015-05-19
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research
  • [Presentation] Growth Mechanisms of InN and Its Alloys Using Droplet Elimination by Radical Beam Irradiation2015

    • Author(s)
      T. Yamaguchi, T. Araki, T. Onuma, T. Honda and Y. Nanishi,
    • Organizer
      2015 EMN Meeting on Droplets
    • Place of Presentation
      Phuket (Thailand)
    • Year and Date
      2015-05-09
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research
  • [Presentation] RF-MBE Growth of InN on Mist-CVD Grown α-In2O3/Sapphire2015

    • Author(s)
      T. Araki, N. Masuda, A. Buma, Y. Nanishi, M. Oda and T. Hitora
    • Organizer
      The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications
    • Place of Presentation
      パシフィコ横浜(神奈川県横浜市)
    • Year and Date
      2015-04-23
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research
  • [Presentation] Progress in GaInN Growth by RF-MBE and Development to Optical Device Fabrication2015

    • Author(s)
      T. Yamaguchi, T. Araki, T. Onuma, T. Honda, Y. Nanishi
    • Organizer
      SPIE Photonics West
    • Place of Presentation
      San Fransisco, USA
    • Year and Date
      2015-02-09
    • Related Report
      2014 Research-status Report
  • [Presentation] New Approach to Fabricate Green, Red and IR Light Sources Based on Nitride Semiconductors by DERI Method2014

    • Author(s)
      Y. Nanishi, T.Yamaguchi and T. Araki,
    • Organizer
      31st International Korea-Japan Seminar on Ceramics
    • Place of Presentation
      Changwon, Korea
    • Year and Date
      2014-11-27
    • Related Report
      2014 Research-status Report
  • [Presentation] Plasma Induced Point Defects in InN During RF-MBE Growth and Those Reduction by DERI Method2014

    • Author(s)
      Y. Nanishi, T. Yamaguchi, T. Araki, A. Uedono and T. Palacios
    • Organizer
      Defects in Semiconductors ,Gordon Research Conference,
    • Place of Presentation
      Walthum, USA
    • Year and Date
      2014-08-05
    • Related Report
      2014 Research-status Report
  • [Presentation] Recent Material Studies of III-Nitride Semiconductors for Next Generation Devices2014

    • Author(s)
      Y. Nanishi, T. Yamaguchi, T. Araki, A. Uedono and T. Palacios,
    • Organizer
      The Professor Harry C. Gatos Lecture and Prize
    • Place of Presentation
      Cambridge, USA
    • Year and Date
      2014-07-24
    • Related Report
      2014 Research-status Report
  • [Presentation] DERI Method; Possible Approach to Longer Wavelength Light Emitters Based on Nitride Semiconductors2014

    • Author(s)
      Y. Nanishi, T. Yamaguchi and T. Araki
    • Organizer
      6th Forum on New Materials (CIMTEC2014)
    • Place of Presentation
      Montecatini Terme, Italy
    • Year and Date
      2014-06-18
    • Related Report
      2014 Research-status Report

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Published: 2014-04-04   Modified: 2018-03-22  

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