Fabrication of completely feffomagnetic pn junction diode based on iron oxide thin films
| Project/Area Number |
26600092
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | The University of Tokyo |
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Principal Investigator |
Seki Munetoshi 東京大学, 工学(系)研究科(研究院), 助教 (40432439)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2014: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | 酸化鉄 / パルスレーザー堆積法 / 強磁性半導体 / 酸化物スピントロニクス / フェリ磁性酸化物 / 酸化鉄半導体 |
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| Outline of Final Research Achievements |
Epitaxial thin films of iron oxides with high spin polarization were fabricated using pulsed laser deposition toward the spin rectifying devices. Single crystalline-Si-substituted Fe2O3 thin films were formed using two-step laser ablation technique. They exhibited ferromagnetic behavior and spin polarization of 31% at room temperature. We also succeeded in fabricating the epitaxial thin films of p-type transparent Si:FeO using pulsed laser deposition. In the double layer structure of Fe3O4/Si:FeO, spin-polarized carriers were injected into the Si:FeO layer from the Fe3O4 ferromagnetic layer at room temperature.
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Report
(3 results)
Research Products
(29 results)
