Development of far-infrared detectors using Ge-Si junctions

• Project/Area Number: 26610046
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Astronomy
• Research Institution: Nagoya University
• Principal Investigator: Kaneda Hidehiro 名古屋大学, 理学(系)研究科(研究院), 教授 (30301724)
• Co-Investigator(Renkei-kenkyūsha): OYABU Shinki 名古屋大学, 理学研究科, 助教 (10396806)
• Research Collaborator: HATTORI Yasuki ; KOBATA Kodai ; HANAOKA Misaki
• Project Period (FY): 2014-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000); Fiscal Year 2015: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000); Fiscal Year 2014: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
• Keywords: 遠赤外線検出器 / Ge検出器 / 遠赤外線 / 半導体検出器

Outline of Final Research Achievements

We develop new far-infrared detectors using Ge-Si junctions. We expect to significantly elongate the cut-off wavelength of the detector beyond 110 microns, utilizing the mechanical stress applied to Ge due to the difference in the coefficient of thermal expansion between Si and Ge. In order to verify that, we have fabricated test junction devices and established a setup for measurement at low temperatures. As a result, we have obtained a hint of the elongation of the cut-off wavelength beyond 120 microns, using a Fourier transform spectrometer. However we could not obtain a decisive result due to rather poor signal-to-noise ratios. We have investigated the cause of the low sensitivity, fabricating junction devices with various kinds of electrodes.

Research Products

• [Journal Article] Development of Blocked-Impurity-Band-Type Ge Detectors Fabricated with the Surface-Activated Wafer Bonding Method for Far-Infrared Astronomy (2016)
  • Author(s): Hanaoka, M.; Kaneda, H.; Oyabu, S.; Yamagishi, M.; Hattori, Y.; Ukai, S.; Shichi, K.; Wada, T.; Suzuki, T.; Watanabe, K.; Nagase, K.; Baba, S.; Kochi, C.
  • Journal Title: Journal of Low Temperature Physics Volume: online first Issue: 1-2 Pages: 1-6
  • DOI: 10.1007/s10909-016-1484-1
  • Peer Reviewed / Acknowledgement Compliant
• [Presentation] Development of Blocked-Impurity-Band-type Ge detectors fabricated with the surface-activated wafer bonding method for far-infrared astronomy (2015)
  • Author(s): 花岡美咲
  • Organizer: 16th international workshop Low Temperature Detectors
  • Place of Presentation: Grenoble, France
  • Year and Date: 2015-07-18
  • Int'l Joint Research
• [Presentation] 宇宙観測用接合型Ge遠赤外線検出器のアレイ化に向けた物理パラメータの決定 (2015)
  • Author(s): 花岡美咲, 金田英宏, 大薮進喜, 服部和生, 田中琴未, 鵜飼壮太, 和田武彦, 鈴木仁研, 渡辺健太郎, 長勢晃一, 公地千尋、馬場俊介
  • Organizer: 日本天文学会春季年会
  • Place of Presentation: 大阪大学
  • Year and Date: 2015-03-18 – 2015-03-21
• [Presentation] Evaluation of far-infrared BIB-type Ge detectors fabricated with the surface-activated wafer bonding technology (2014)
  • Author(s): (Ga濃度:1x1016, 4x1016, 8x1016 cm-3)Hanaoka, M., Kaneda, H., Oyabu, S., Hattori, Y., Tanaka, K., Wada, T., Suzuki, T., Watanabe, K., Nagase, K., Baba, S., ＆ Kochi, C.
  • Organizer: THE UNIVERSE IN THE LIGHT OF AKARI and Synergy with future Large Space Telescopes
  • Place of Presentation: Oxford大学, UK
  • Year and Date: 2014-07-09 – 2014-07-11