Creation of semiconductor surface for the next generation by catalytic tool free from metallic element

• Project/Area Number: 26630026
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Production engineering/Processing studies
• Research Institution: Osaka University
• Principal Investigator: ARIMA KENTA 大阪大学, 工学(系)研究科(研究院), 准教授 (10324807)
• Project Period (FY): 2014-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000); Fiscal Year 2015: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000); Fiscal Year 2014: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
• Keywords: 表面工学 / 超精密加工 / 電気化学 / 加工学 / グラフェン / 触媒 / 半導体表面 / 超純水

Outline of Final Research Achievements

The purpose of this study is to develop a non-metallic catalytic tool to remove protrusions selectively on a semiconductor surface by chemical interactions. We first need to find a catalyst that can etch a semiconductor surface effectively. In this research period, I obtained the results shown below.
(1) I performed electrochemical measurements based on cyclic voltammetry to evaluate catalytic activities of materials. And I confirmed that graphene-based catalysts are promising for our project. (2) I have developed a method to deposit a graphene flake on a semiconductor surface. And I performed atomic force microscopy observations in water and found that a semiconductor surface around the deposited flakes is selectively etched.
These results will help me to develop a non-metallic catalytic tool with high performances.

Research Products

• [Int'l Joint Research] ローレンスバークレー国立研究所(米国)
• [Journal Article] Catalyst-assisted Electroless Flattening of Ge Surfaces in Dissolved-O2-containing Water (2015)
  • Author(s): Tatsuya Kawase, Yusuke Saito, Atsushi Mura, Takeshi Okamoto, Kentaro Kawai, Yasuhisa Sano, Mizuho Morita, Kazuto Yamauchi, Kenta Arima
  • Journal Title: ChemElectroChem Volume: 2 Issue: 11 Pages: 1656-1659
  • DOI: 10.1002/celc.201500245
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Microfluidic valve array control system integrating a fluid demultiplexer circuit (2015)
  • Author(s): Kentaro Kawai, Kenta Arima, Mizuho Morita and Shuichi Shoji
  • Journal Title: Journal of Micromechanics and Microengineering Volume: 25 Issue: 6 Pages: 0650161-7
  • DOI: 10.1088/0960-1317/25/6/065016
  • Peer Reviewed
• [Journal Article] Fundamental Properties of Metal-Assisted Chemical Etching of Ge Surfaces Mediated by Dissolved O₂ Molecules in Water (2015)
  • Author(s): 有馬健太、川合健太郎、森田瑞穂
  • Journal Title: Hyomen Kagaku Volume: 36 Issue: 7 Pages: 369-374
  • DOI: 10.1380/jsssj.36.369
  • NAID: 130005088879
  • ISSN: 0388-5321, 1881-4743
  • Acknowledgement Compliant
• [Journal Article] 洗浄技術のコツ ―Si表面のウェット洗浄― (2015)
  • Author(s): 有馬健太
  • Journal Title: 応用物理 Volume: 84 Pages: 1009-1012
  • NAID: 130007718673
• [Journal Article] Observation of Adsorbed Water on Ultrathin GeO₂/Ge(100) by Ambient-Pressure X-ray Photoelectron Spectroscopy (AP-XPS) (2015)
  • Author(s): 有馬健太
  • Journal Title: Journal of the Vacuum Society of Japan Volume: 58 Issue: 1 Pages: 20-26
  • DOI: 10.3131/jvsj2.58.20
  • NAID: 130004952533
  • ISSN: 1882-2398, 1882-4749
• [Journal Article] Aggregation of Carbon Atoms at SiO2/SiC(0001) Interface by Plasma Oxidation toward Formation of Pit-free Graphene (2014)
  • Author(s): Naoki Saito, Daichi Mori, Akito Imafuku, Keisuke Nishitani, Hiroki Sakane, Kentaro Kawai, Yasuhisa Sano, Mizuho Morita and Kenta Arima
  • Journal Title: Carbon Volume: 80 Pages: 440-446
  • DOI: 10.1016/j.carbon.2014.08.083
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Atomic-scale Observations of Semiconductor Surfaces after Ultra-Precision Machining (2014)
  • Author(s): 有馬健太
  • Journal Title: Journal of the Japan Society for Precision Engineering Volume: 80 Issue: 5 Pages: 452-456
  • DOI: 10.2493/jjspe.80.452
  • NAID: 130004513557
  • ISSN: 0912-0289, 1882-675X
• [Journal Article] Behaviors of Carbon Atoms during Plasma Oxidation of 4H-SiC(0001) Surfaces near Room Temperature (2014)
  • Author(s): Naoki Saito, Daichi Mori, Akito Imafuku, Kentaro Kawai, Yasuhisa Sano, Mizuho Morita, and Kenta Arima
  • Journal Title: ECS Transactions Volume: 64 Issue: 17 Pages: 23-28
  • DOI: 10.1149/06417.0023ecst
  • Acknowledgement Compliant
• [Journal Article] Ambient-Pressure XPS Study of GeO2/Ge(100) and SiO2/Si(100) at Controlled Relative Humidity (2014)
  • Author(s): Kenta Arima, Yoshie Kawai, Yuya Minoura, Yusuke Saito, Daichi Mori, Hiroshi Oka, Kentaro Kawai, Takuji Hosoi, Zhi Liu, Heiji Watanabe, and Mizuho Morita
  • Journal Title: ECS Transactions Volume: 64 Issue: 8 Pages: 77-82
  • DOI: 10.1149/06408.0077ecst
• [Presentation] Segregation of ions in deliquesced droplets of alkali-halide nano-crystals on SiO2 (2016)
  • Author(s): Kenta Arima
  • Organizer: International Conference and Exhibition on Materials Chemistry
  • Place of Presentation: スペイン・バレンシア
  • Year and Date: 2016-04-01
  • Int'l Joint Research / Invited
• [Presentation] グラフェン触媒を援用した水中でのGe表面エッチングの基礎検討 (2016)
  • Author(s): 森大地、中出和希、佐藤慎祐、川合健太郎、森田瑞穂、有馬健太
  • Organizer: 2016年応用物理学会春季学術講演会
  • Place of Presentation: 東京都目黒区
  • Year and Date: 2016-03-21
• [Presentation] 半導体表面加工に用いるグラフェン系触媒の合成と電気化学的評価 (2016)
  • Author(s): 佐藤慎祐、森大地、中出和樹、齋藤雄介、川合健太郎、森田瑞穂、有馬健太
  • Organizer: 2016年度精密工学会春季大会
  • Place of Presentation: 千葉県野田市
  • Year and Date: 2016-03-16
• [Presentation] 水中で酸素還元触媒と接触したGe表面のエッチング特性と平坦化への応用 (2016)
  • Author(s): 中出和希、森大地、川瀬達也、川合健太郎、佐野泰久、山内和人、森田瑞穂、有馬健太
  • Organizer: 電子デバイス界面テクノロジー研究会 －材料・プロセス・デバイス特性の物理－
  • Place of Presentation: 静岡県三島市
  • Year and Date: 2016-01-22
• [Presentation] 触媒金属の酸素還元活性を利用した水中でのGe表面の平坦化 (2015)
  • Author(s): 有馬健太、川瀬達也、齋藤雄介、川合健太郎、佐野泰久、森田瑞穂、山内和人
  • Organizer: 2015年真空・表面科学合同講演会
  • Place of Presentation: 茨城県つくば市
  • Year and Date: 2015-12-01
• [Presentation] Origin of Anomalous Positive Charging of Water-adsorbed Thin GeO2 Films Studied by Ambient-pressure XPS (2015)
  • Author(s): K. Arima, D. Mori, Y. Saito, H. Oka, K. Kawai, T. Hosoi, M. Morita, H. Watanabe and Z. Liu
  • Organizer: 16th European Conference on Application of Surface and Interface Analysis
  • Place of Presentation: スペイン・グラナダ
  • Year and Date: 2015-10-01
  • Int'l Joint Research
• [Presentation] 酸素還元活性を持つ触媒金属による水中でのGe表面平坦化の試み (2015)
  • Author(s): 有馬 健太、川瀬 達也、齋藤 雄介、川合 健太郎、佐野 泰久、山内 和人、森田 瑞穂
  • Organizer: 2015年応用物理学会秋季学術講演会
  • Place of Presentation: 愛知県名古屋市
  • Year and Date: 2015-09-16
• [Presentation] 水分子が吸着したGeO2/Ge構造の特異な帯電状態のAP-XPS観測 (2015)
  • Author(s): 有馬 健太、森 大地、岡 博史、細井 卓治、川合 健太郎、Liu Zhi、渡部 平司、森田 瑞穂
  • Organizer: 2015年応用物理学会秋季学術講演会
  • Place of Presentation: 愛知県名古屋市
  • Year and Date: 2015-09-13
• [Presentation] 酸素還元触媒を用いた水中でのGe表面の平坦化に関する研究 ～触媒材料の検討～ (2015)
  • Author(s): 中出和希、森大地、齋藤雄介、川合健太郎、佐野泰久、山内和人、森田瑞穂、有馬健太
  • Organizer: 2015年度精密工学会秋季大会
  • Place of Presentation: 宮城県仙台市
  • Year and Date: 2015-09-05
• [Presentation] O2還元活性を持つグラフェン触媒の合成と性能評価 (2015)
  • Author(s): 森 大地、中出和希、齋藤雄介、川合健太郎、森田瑞穂、有馬健太
  • Organizer: 精密工学会2015年度関西地方定期学術講演会
  • Place of Presentation: 京都府京都市
  • Year and Date: 2015-06-23
• [Presentation] 単一グラフェンフレークによる水中での Ge 表面のエッチング特性 (2015)
  • Author(s): 中出和希、森 大地、齋藤雄介、川合健太郎、森田瑞穂、有馬健太
  • Organizer: 精密工学会2015年度関西地方定期学術講演会
  • Place of Presentation: 京都府京都市
  • Year and Date: 2015-06-23
• [Presentation] Metal-Assisted Etching of Ge Surfaces in Water: From Pit Formation to Flattening (2015)
  • Author(s): Kenta Arima, Tatsuya Kawase, Atsushi Mura, Kentaro Kawai, Yasuhisa Sano, Kazuto Yamauchi and Mizuho Morita
  • Organizer: 2015 MRS Spring Meeting & Exhibit
  • Place of Presentation: 米国・サンフランシスコ
  • Year and Date: 2015-04-06
  • Int'l Joint Research
• [Presentation] Formation of Graphene with Reduced Pits on SiC(0001) Assisted by Plasma Oxidation and Wet Etching (2014)
  • Author(s): Daichi Mori, Naoki Saito, Akito Imafuku, Kentaro Kawai, Yasuhisa Sano, Mizuho Morita and Kenta Arima
  • Organizer: The 7th International Symposium on Surface Science (ISSS-7)
  • Place of Presentation: Matsue, Japan
  • Year and Date: 2014-11-06
• [Presentation] Behaviors of Carbon Atoms during Plasma Oxidation of 4H-SiC(0001) Surfaces near Room Temperature (2014)
  • Author(s): Naoki Saito, Daichi Mori, Akito Imafuku, Kentaro Kawai, Yasuhisa Sano, Mizuho Morita, and Kenta Arima
  • Organizer: 226th Meeting of The Electrochemical Society
  • Place of Presentation: Cancun, Mexico
  • Year and Date: 2014-10-06
• [Presentation] Ambient-Pressure XPS Study of GeO2/Ge(100) and SiO2/Si(100) at Controlled Relative Humidity (2014)
  • Author(s): Kenta Arima, Yoshie Kawai, Yuya Minoura, Yusuke Saito, Daichi Mori, Hiroshi Oka, Kentaro Kawai, Takuji Hosoi, Zhi Liu, Heiji Watanabe, and Mizuho Morita
  • Organizer: 226th Meeting of The Electrochemical Society
  • Place of Presentation: Cancun, Mexico
  • Year and Date: 2014-10-06
• [Presentation] Combination of Plasma Oxidation and Wet Etching to Create Monolayer-scale C Source for Pit-free Graphene on SiC Surfaces (2014)
  • Author(s): Kenta Arima, Naoki Saito, Daichi Mori, Kentaro Kawai, Mizuho Morita and Yasuhisa Sano
  • Organizer: Collaborative Conference on 3D&Materials Research 2014
  • Place of Presentation: Incheon/Seoul, South Korea
  • Year and Date: 2014-06-24
  • Invited
• [Presentation] Understanding Water Interaction with Ge Surfaces: From Wetting to Machining (2014)
  • Author(s): Kenta Arima, Kentaro Kawai and Mizuho Morita
  • Organizer: BIT's 3rd Annual World Congress of Advanced Materials 2014
  • Place of Presentation: Chongqing, China
  • Year and Date: 2014-06-06
  • Invited
• [Presentation] Accumulation of C Atoms at SiO2/SiC Interface by Plasma Oxidation of 4H-SiC(0001) at Room Temperature: Toward Formation of PIt-Free Graphene (2014)
  • Author(s): Kenta Arima, Naoki Saito, Kentaro Kawai, Yasuhisa Sano and Mizuho Morita
  • Organizer: 2014 MRS Spring Meeting & Exhibit
  • Place of Presentation: San Francisco, USA
  • Year and Date: 2014-04-24
• [Remarks] Kenta Arima's Homepage
  • URL: http://www-pm.prec.eng.osaka-u.ac.jp/kenta_arima/index.html