Development of the artificial design technique of the energy dependence of the spin polarization
Project/Area Number |
26630123
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Research Category |
Grant-in-Aid for Challenging Exploratory Research
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Allocation Type | Multi-year Fund |
Research Field |
Electronic materials/Electric materials
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Research Institution | The University of Tokyo |
Principal Investigator |
Ohya Shinobu 東京大学, 大学院工学系研究科(工学部), 准教授 (20401143)
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Project Period (FY) |
2014-04-01 – 2017-03-31
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Project Status |
Completed (Fiscal Year 2016)
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Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2016: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2015: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2014: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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Keywords | スピントロニクス / 分子線エピタキシー / 量子効果 / ヘテロ構造 / 量子井戸 / スピン依存トンネル現象 / 磁気トンネル接合 / 半導体 / 共鳴トンネルダイオード |
Outline of Final Research Achievements |
Using ferromagnetic-semiconductor quantum heterostructures, which are an ideal model system of a ferromagnetic quantum heterostructure, we have shown that the quantum size effect is strengthened by the ferromagnetic transition of the quantum well and that magnetic anisotropy is changed by the quantum size effect. We have demonstrated epitaxial single-crystal growth of Fe/MgO on a semiconductor Ge and a ferromagnetic GeFe, which is a ferromagnetic semiconductor based on Ge, and we have successfully observed tunneling magnetoresistance (TMR) in these structures for the first time. High TMR ratios up to 200% were observed in Fe/MgO/Fe/MgO/Ge, which contains an Fe quantum well. We observed a systematic change in the I-V characteristics when varying the thickness of the Fe quantum well. This is the first observation of the quantum size effect in the Fe quantum well grown on Ge.
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Report
(4 results)
Research Products
(20 results)
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[Presentation] Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe2016
Author(s)
Kohei Okamoto, Yuki K. Wakabayashi, Wataru Ashihara, Yoshisuke Ban, Shoichi Sato, Masaaki Tanaka, and Shinobu Ohya
Organizer
9th International Conference on Physics and Applications of Spin-Related Phenomena in Solids (PASPS)
Place of Presentation
Kobe International Conference Center, Kobe, Hyogo, Japan
Year and Date
2016-08-08
Related Report
Int'l Joint Research
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