| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2016: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2015: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2014: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
|
|---|
| Outline of Final Research Achievements |
Using ferromagnetic-semiconductor quantum heterostructures, which are an ideal model system of a ferromagnetic quantum heterostructure, we have shown that the quantum size effect is strengthened by the ferromagnetic transition of the quantum well and that magnetic anisotropy is changed by the quantum size effect. We have demonstrated epitaxial single-crystal growth of Fe/MgO on a semiconductor Ge and a ferromagnetic GeFe, which is a ferromagnetic semiconductor based on Ge, and we have successfully observed tunneling magnetoresistance (TMR) in these structures for the first time. High TMR ratios up to 200% were observed in Fe/MgO/Fe/MgO/Ge, which contains an Fe quantum well. We observed a systematic change in the I-V characteristics when varying the thickness of the Fe quantum well. This is the first observation of the quantum size effect in the Fe quantum well grown on Ge.
|
