| Project/Area Number |
26630125
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
Hatano Mutsuko 東京工業大学, 理工学研究科, 教授 (00417007)
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| Co-Investigator(Renkei-kenkyūsha) |
IWASAKI Takayuki 東京工業大学, 大学院理工学研究科, 助教 (80454031)
MATSUTANI Akihiro 東京工業大学, 技術部, 技術職員 (40397047)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2015: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2014: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | 電子・電気材料 |
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| Outline of Final Research Achievements |
We realize the spin state control of graphene to obtain ultra-low power / functional devices. Graphene is employed as the platforms of spin state control because of small spin-orbit interaction. The key for the spin state
control is the introduction of paramagnetic impurities. The fluorine impurity controlled the charge and spin current in graphene and we call diamond-sheet. Magnetotransport measurements suggests that spin relaxation time could be controllable by one order of magnitude by gate voltages.
We have also tried to observe spin Hall effect using non-local resistance measurement of Hallbar device. We found the possibility of the existence of spin Hall effect in diamond-sheet. Further evidence should be provided in the future by using highly sensitive magnetic sensor consists of NV centers in diamond.
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