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Solution-processed SiC Films and Its Application to Power Devices

Research Project

Project/Area Number 26630127
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeMulti-year Fund
Research Field Electronic materials/Electric materials
Research InstitutionJapan Advanced Institute of Science and Technology

Principal Investigator

Inoue Satoshi  北陸先端科学技術大学院大学, グリーンデバイス研究センター, 特任教授 (60553237)

Co-Investigator(Kenkyū-buntansha) TOKUMITSU EISUKE  北陸先端科学技術大学院大学, グリーンデバイス研究センター, 教授 (10197882)
SHIMODA TATSUYA  北陸先端科学技術大学院大学, マテリアルサイエンス研究科, 教授 (70447689)
MASUDA TAKASHI  北陸先端科学技術大学院大学, マテリアルサイエンス研究科, 助教 (70643138)
Project Period (FY) 2014-04-01 – 2016-03-31
Project Status Completed (Fiscal Year 2015)
Budget Amount *help
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2014: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
KeywordsSilicon carbide / Solution process / Power device / Liquid material / Contact resistance
Outline of Final Research Achievements

We developed the SiC-ink using liquid silicon material and liquid carbon material, and investigated a possibility of its application to power devices. The SiC films were deposited by using the SiC-ink and LVD (liquid vapor deposition) method. The CBM (conduction band minima) and VBM (valence band maxima) were evaluated by the IPES (inverse photoemission spectroscopy) and PYS (photon yield spectroscopy), respectively. As a result, it was confirmed that CBM and VBM were controlled by the carbon ratio in the SiC-ink. Both CBM and VBM shifted with the increase of the carbon ratio so that the band-gap increased. These data indicate that the contact resistance between Ni electrode and P+-SiC region can be reduced by using the SiC film fabricated by SiC-ink. The CTLM-TEG was fabricated to measure the contact resistance between Ni electrode and P+-SiC film using SiC-ink, and the contact resistance of 1.01×10-7Ωcm2 was realized.

Report

(3 results)
  • 2015 Annual Research Report   Final Research Report ( PDF )
  • 2014 Research-status Report
  • Research Products

    (3 results)

All 2016 2015

All Journal Article (2 results) (of which Peer Reviewed: 2 results,  Acknowledgement Compliant: 2 results,  Open Access: 1 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Photoelectron yield spectroscopy and inverse photoemission spectroscopy evaluations of p-type amorphous silicon carbide films prepared using liquid materials2016

    • Author(s)
      Tatsuya Murakami, Takashi Masuda, Satoshi Inoue, Hiroshi Yano, Noriyuki Iwamuro, and Tatsuya Shimoda
    • Journal Title

      AIP Advances

      Volume: 6

    • NAID

      120007135360

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Journal Article] Polymeric precursor for solution-processed amorphous silicon carbide2015

    • Author(s)
      Takashi Masuda, Akira Iwasaka, Hideyuki Takagishi and Tatsuya Shimoda
    • Journal Title

      Journal of Materials Chemistry C

      Volume: 3 Issue: 47 Pages: 12212-12219

    • DOI

      10.1039/c5tc03169a

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Patent(Industrial Property Rights)] 前駆体溶液及び炭化シリコンを含有する層、並びに、パワー半導体素子及びパワー半導体素子の製造方法2015

    • Inventor(s)
      下田達也、井上聡、増田貴史、村上達也、岩室憲幸、矢野裕司
    • Industrial Property Rights Holder
      北陸先端科学技術大学院、筑波大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2015-030433
    • Filing Date
      2015-02-19
    • Related Report
      2014 Research-status Report

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Published: 2014-04-04   Modified: 2017-05-10  

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