Solution-processed SiC Films and Its Application to Power Devices
| Project/Area Number |
26630127
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Japan Advanced Institute of Science and Technology |
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Principal Investigator |
Inoue Satoshi 北陸先端科学技術大学院大学, グリーンデバイス研究センター, 特任教授 (60553237)
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| Co-Investigator(Kenkyū-buntansha) |
TOKUMITSU EISUKE 北陸先端科学技術大学院大学, グリーンデバイス研究センター, 教授 (10197882)
SHIMODA TATSUYA 北陸先端科学技術大学院大学, マテリアルサイエンス研究科, 教授 (70447689)
MASUDA TAKASHI 北陸先端科学技術大学院大学, マテリアルサイエンス研究科, 助教 (70643138)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2014: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | Silicon carbide / Solution process / Power device / Liquid material / Contact resistance |
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| Outline of Final Research Achievements |
We developed the SiC-ink using liquid silicon material and liquid carbon material, and investigated a possibility of its application to power devices. The SiC films were deposited by using the SiC-ink and LVD (liquid vapor deposition) method. The CBM (conduction band minima) and VBM (valence band maxima) were evaluated by the IPES (inverse photoemission spectroscopy) and PYS (photon yield spectroscopy), respectively. As a result, it was confirmed that CBM and VBM were controlled by the carbon ratio in the SiC-ink. Both CBM and VBM shifted with the increase of the carbon ratio so that the band-gap increased. These data indicate that the contact resistance between Ni electrode and P+-SiC region can be reduced by using the SiC film fabricated by SiC-ink. The CTLM-TEG was fabricated to measure the contact resistance between Ni electrode and P+-SiC film using SiC-ink, and the contact resistance of 1.01×10-7Ωcm2 was realized.
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Report
(3 results)
Research Products
(3 results)
