A STUDY OF TUNNEL ELECTRON INJECTION LIGHT-EMITTING DEVICES WITH A TWO-DIMENSIONAL QUANTUM STRUCTURE OF ULTRATHIN SILICON/SILICON DIOXIDE
| Project/Area Number |
26630130
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
MORITA Mizuho 大阪大学, 工学研究科, 教授 (50157905)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2016: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Keywords | シリコン / シリコン酸化膜 / 発光デバイス / 量子井戸 / トンネル効果 |
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| Outline of Final Research Achievements |
An electroluminescence peak at the increasing energy with decreasing silicon layer thickness has been observed in indium tin oxide/ultrathin silicon dioxide film/ultrathin silicon layer/buried silicon dioxide devices. This indicates that the peak is due to quantum confinement effects in a two-dimensional structure. A thinning method to improve the thickness uniformity of an ultrathin silicon layer in a defined area by photoetching with N-fluoropyridinium salts using a system with a projector and reduction optics has been developed.
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Report
(5 results)
Research Products
(5 results)
