| Project/Area Number |
26630131
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
FUJIWARA Yasufumi 大阪大学, 工学(系)研究科(研究院), 教授 (10181421)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2015: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2014: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | 希土類添加半導体 / 量子情報機能 / エピタキシャル |
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| Outline of Final Research Achievements |
Eu-doped GaN is a solid state material with promising features for quantum manipulation. In this study, we investigated the population dynamics of Eu in ions in this system by resonant excitation. From differences in the emission related to transitions between the 5D0 and 7F2 manifold in the Eu ions, we could distinguish different luminescence sites and observe that a resonant energy transfer takes place between two of these sites which are in proximity of each other. The time constants related to this energy transfer were on the order of 100 microsecond. By using different substrates, the energy transfer efficiency could be strongly altered, and it was demonstrated that the coupling between ions has an out-of-plane character. Based on these results, a microscopic model of this combined center was presented.
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