Development for High-Performance Tunnel Transistors with Direct-Transition Band Structure of Ge
| Project/Area Number |
26630133
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyushu University |
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Principal Investigator |
SADOH Taizoh 九州大学, システム情報科学研究科(研究院, 准教授 (20274491)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2015: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2014: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | 電子・電気材料 / 半導体 / Si系ヘテロ材料 / 集積回路 / 結晶成長 / トランジスタ |
|---|
| Outline of Final Research Achievements |
High-performance tunnel transistors are required to realize large-scale integrated circuits (LSIs) with low-power consumption. However, on-current of the conventional Si tunnel transistors is low, though off-current can be decreased. In the present study, to achieve high-performance tunnel transistors, techniques for strain-introduction have been developed to obtain direct-transition band structures of Ge. In addition, a technique for high-concentration doping into Ge has been investigated. These techniques will facilitate formation of high-performance tunnel transistors with high on-current.
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Report
(3 results)
Research Products
(23 results)
