| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2016: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2015: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2014: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Outline of Final Research Achievements |
We performed molecular dynamics simulation of nickelidation process in Si nanowires (NWs) surrounded by thermally grown silicon dioxide (SiO2) film. The simulation result shows that a oxidation induced stress increases with thinning the NW and it suppresses the Ni diffusion rate. At the same time, oxide layer induces a lattice disorder near the interface, which conversely enhances the Ni diffusion rate. This atomistic picture is supported by our experiment. The nickelidation reaction rate of thin SiNW was found to be enhanced by a post-oxidation annealing (POA). An ultraviolet Raman spectroscopy measurement revealed that the POA enhances a lattice disorder in SiNWs. The lattice disorder becomes prominent in the vicinity of the SiO2 film, so that the nickelidation rate increases in thinner SiNWs. These results suggest a pivotal role of oxidation-induced lattice disorder for controlling the metallic contact formation in SiNW devices.
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