Precise Control of Nickelidation Process of Si Nanowires Utilizing Computational Physics

• Project/Area Number: 26630135
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Waseda University
• Principal Investigator: Watanabe Takanobu 早稲田大学, 理工学術院, 教授 (00367153)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Project Status: Completed (Fiscal Year 2016)
• Budget Amount: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000); Fiscal Year 2016: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000); Fiscal Year 2015: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000); Fiscal Year 2014: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
• Keywords: 半導体超微細化 / 電子デバイス・機器 / ナノコンタクト / 計算物理 / 電子・電気材料

Outline of Final Research Achievements

We performed molecular dynamics simulation of nickelidation process in Si nanowires (NWs) surrounded by thermally grown silicon dioxide (SiO2) film. The simulation result shows that a oxidation induced stress increases with thinning the NW and it suppresses the Ni diffusion rate. At the same time, oxide layer induces a lattice disorder near the interface, which conversely enhances the Ni diffusion rate. This atomistic picture is supported by our experiment. The nickelidation reaction rate of thin SiNW was found to be enhanced by a post-oxidation annealing (POA). An ultraviolet Raman spectroscopy measurement revealed that the POA enhances a lattice disorder in SiNWs. The lattice disorder becomes prominent in the vicinity of the SiO2 film, so that the nickelidation rate increases in thinner SiNWs. These results suggest a pivotal role of oxidation-induced lattice disorder for controlling the metallic contact formation in SiNW devices.

Research Products

• [Journal Article] ON current enhancement of nanowire Schottky barrier tunnel field effect transistors (2016)
  • Author(s): Kohei Takei, Shuichiro Hashimoto, Jing Sun, Xu Zhang, Shuhei Asada, Taiyu Xu, Takashi Matsukawa, Meishoku Masahara, and Takanobu Watanabe
  • Journal Title: Japanese Journal of Applied Physics Volume: 55 Issue: 4S Pages: 04ED07-04ED07
  • DOI: 10.7567/jjap.55.04ed07
  • NAID: 210000146303
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Impact of Thermal History of Si Nanowire Fabrication Process on Ni Silicidation Rate (2015)
  • Author(s): Hiroki Yamashita, Hiroki Kosugiyama, Yasuhiro Shikahama, Shuichiro Hashimoto, Kouhei Takei , Jing Sun, Takashi Matsukawa, Meishoku Masahara, and Takanobu Watanabe
  • Journal Title: Japanese Journal of Applied Physics Volume: 53 Issue: 8 Pages: 085201-085201
  • DOI: 10.7567/jjap.53.085201
  • NAID: 210000144303
  • Peer Reviewed
• [Presentation] mpact of Ar+ Ion Irradiation on Nickelidaton Reaction of Si Nanowire Covered with Oxide Film (2016)
  • Author(s): Shuhei Asada, Shuichiro Hashimoto, X. Zhang , Taiyu Xu, Shunsuke Oba , Ryo Yokogawa, Motohiro Tomita, Atsushi Ogura, Takashi Matsukawa and Takanobu Watanabe
  • Organizer: the 29th International Microprocesses and Nanotechnology Conference (MNC 2016)
  • Place of Presentation: ANA CLOWNE PLAZA Kyoto
  • Year and Date: 2016-11-11
  • Int'l Joint Research
• [Presentation] Dopant Distribution in Nickelided Si Nanowire Surrounded by SiO2 Film Characterized by Laser-assisted Atom Probe Tomography (2016)
  • Author(s): Shuichiro Hashimoto, Shuhei Asada, Taiyu Xu, Shunsuke Oba, Takashi Matsukawa, Takanobu Watanabe
  • Organizer: the 29th International Microprocesses and Nanotechnology Conference (MNC 2016)
  • Place of Presentation: ANA CLOWNE PLAZA Kyoto
  • Year and Date: 2016-11-10
  • Int'l Joint Research
• [Presentation] Molecular Dynamics Simulations on the Formation of Dielectric Thin Films and Interface Properties (2016)
  • Author(s): Takanbu Watanabe
  • Organizer: 2016 International Conference on Solid State Devices and Materials (SSDM 2016), Short Course A
  • Place of Presentation: EPOCAL Tsukuba
  • Year and Date: 2016-09-26
  • Int'l Joint Research / Invited
• [Presentation] A Silicon Nanowire Thermoelectric Device Fabricated by Top-Down Process (2016)
  • Author(s): Shuichiro Hashimoto, Shuhei Asada, Taiyu Xu, Shunsuke Oba, Takashi Matsukawa, and Takanobu Watanabe
  • Organizer: he European Conference on Thermoelectrics 2016 (ECT2016)
  • Place of Presentation: Lisbon, Portugal
  • Year and Date: 2016-09-20
  • Int'l Joint Research
• [Presentation] Niシリサイド化シリコンナノワイヤを用いた熱電発電デバイスの作製と特性評価 (2016)
  • Author(s): 麻田 修平, 橋本 修一郎, 徐 泰宇, 大場 俊輔, 松川 貴, 渡邉 孝信
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ
  • Year and Date: 2016-09-15
• [Presentation] ナノワイヤ型不純物偏析ショットキー接合MOSFETにおけるワイヤ幅縮小効果 (2016)
  • Author(s): 橋本 修一郎, 遠藤 清, 武井 康平, ソン セイ, 張 旭, 徐 泰宇, 麻田 修平, 大場 俊輔, 松川 貴, 昌原 明植, 渡邉 孝信
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東工大大岡山キャンパス
  • Year and Date: 2016-03-20
• [Presentation] Ar+イオン照射によるSiナノワイヤのNi合化反応の高精度制御 (2016)
  • Author(s): 大場 俊輔, 橋本 修一郎, 武井 康平, ソン セイ, 張 旭, 徐 泰宇, 麻田 修平, 臼田 稔宏, 遠藤 清, 富田 基裕, 徳武 寛紀, 今井 亮佑, 小椋 厚志, 松川 貴, 昌原 明植, 渡邉 孝信
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東工大大岡山キャンパス
  • Year and Date: 2016-03-19
• [Presentation] Ar+イオン照射によるSiナノワイヤのNi合金化プロセスの制御性向上 (2016)
  • Author(s): 麻田 修平, 橋本 修一郎, 武井 康平, ソン セイ, 張 旭, 徐 泰宇, 臼田 稔宏, 遠藤 清, 大場 俊輔, 富田 基裕, 今井 亮佑, 小椋 厚志, 松川 貴, 昌原 明植, 渡邉 孝信
  • Organizer: 電子デバイス界面テクノロジー研究会 (第21回)
  • Place of Presentation: 東レ研修センター
  • Year and Date: 2016-01-22
• [Presentation] Origin of Preferential Diffusion of Ni along Si/SiO2 Interface in Si Nanowire (2015)
  • Author(s): Shuichiro Hashimoto, Kohei Takei, Jing Sun, Shuhei Asada, Xu Zhang, Taiyu Xu, Toshihiro Usuda, Motohiro Tomita, Ryosuke Imai, Atsushi Ogura, Takashi Matsukawa, Meishoku Masahara, and Takanobu Watanabe
  • Organizer: 28th International Microprocesses and Nanotechnology Conference (MNC 2015)
  • Place of Presentation: Toyama International Conference Center
  • Year and Date: 2015-11-12
  • Int'l Joint Research
• [Presentation] Controlling Nickelidation Process of Si Nanowire by Ar+ Ion Irradiation (2015)
  • Author(s): Shuhei Asada, Shuichiro Hashimoto, Kohei Takei, Jing Sun, Xu Zhang, Taiyu Xu, Toshihiro Usuda, Motohiro Tomita, Ryosuke Imai, Atsushi Ogura, Takashi Matsukawa, Meishoku Masahara, and Takanobu Watanabe
  • Organizer: 28th International Microprocesses and Nanotechnology Conference (MNC 2015)
  • Place of Presentation: Toyama International Conference Center
  • Year and Date: 2015-11-11
  • Int'l Joint Research
• [Presentation] ON Current Enhancement of Nanowire Schottky Barrier Tunnel FET (2015)
  • Author(s): Kohei Takei, Shuichiro Hashimoto, Jing Sun, Xu Zhang, Shuhei Asada, Taiyu Xu, Takashi Wakamizu, Takashi Matsukawa, Meishoku Masahara and Takanobu Watanabe
  • Organizer: 2015 International Conference on Solid State Devices and Materials (SSDM 2015)
  • Place of Presentation: Sapporo Convention Center
  • Year and Date: 2015-09-29
  • Int'l Joint Research
• [Presentation] ショットキー障壁トンネルFETのスケーリング耐性の解析 (2015)
  • Author(s): 徐 泰宇, 橋本 修一郎, 武井 康平, ソン セイ, 麻田 修平, 張 旭, 渡邉孝信
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場
  • Year and Date: 2015-09-16
• [Presentation] GeO2酸化膜を考慮したGeナノワイヤ構造の熱伝導率およびフォノン分散関係の分子動力学的解析 (2015)
  • Author(s): 小出 隆太, 志村 昴亮, 橋本 修一郎, 富田 基裕, 渡邉 孝信
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場
  • Year and Date: 2015-09-16
• [Presentation] 分子動力学法および分子軌道法を用いたSiGe混晶内の原子間ポテンシャルに関する考察 (2015)
  • Author(s): 富田 基裕, 小椋 厚志, 渡邉 孝信
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場
  • Year and Date: 2015-09-16
• [Presentation] Ar+イオン照射によるSiナノワイヤのNi合金化プロセスの制御 (2015)
  • Author(s): 張 旭, 橋本 修一郎, 武井 康平, ソン セイ, 徐 泰宇, 麻田 修平, 臼田 稔宏, 富田 基裕, 今井 亮佑, 小椋厚志, 松川 貴, 昌原 明植, 渡邉孝信
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場
  • Year and Date: 2015-09-14
• [Presentation] Enhancement of Ni Diffusion Rate in Disordered Si Nanocrystal Studied by Molecular Dynamics Simulation (2015)
  • Author(s): Shuichiro Hashimoto, Kohei Takei, Jing Sun, Shuhei Asada, Taiyu Xu and Takanobu Watanabe
  • Organizer: The 6th Waseda-NIMS International Symposium
  • Place of Presentation: Waseda University
  • Year and Date: 2015-07-19
  • Int'l Joint Research
• [Presentation] Controlling Nickel Silicidation Process of Si Nanowires by Ar+ Ion Irradation (2015)
  • Author(s): Kohei Takei, Shuichiro Hashimoto, Jing Sun, Shuhei Asada, Xu Zhang, Taiyu Xu, Toshihiro Usuda, Motohiro Tomita, Ryosuke Imai, Atsushi Ogura, Takashi Matsukawa, Meishoku Masahara and Takanobu Watanabe
  • Organizer: The 6th Waseda-NIMS International Symposium
  • Place of Presentation: Waseda University
  • Year and Date: 2015-07-19
  • Int'l Joint Research
• [Presentation] Demonstration of Nanowire Schottky Barrier Tunnel FET (2015)
  • Author(s): Taiyu Xu, Shuichiro Hashimoto, Kohei Takei, Jing Sun, Xu Zhang, Shuhei Asada, Takashi Matsukawa, Meishoku Masahara and Takanobu Watanabe
  • Organizer: The 6th Waseda-NIMS International Symposium
  • Place of Presentation: Waseda University
  • Year and Date: 2015-07-19
  • Int'l Joint Research
• [Presentation] Morphology Changes of Ni Ion Irradiated Si(111) Surface at Room Temperature (2015)
  • Author(s): Kenta Imazu, Shuichiro Hashimoto, Genki Obana, Takefumi Kamioka, Takanobu Watanabe
  • Organizer: The 6th Waseda-NIMS International Symposium
  • Place of Presentation: Waseda University
  • Year and Date: 2015-07-19
  • Int'l Joint Research
• [Presentation] Ni/Si(111)-√19×√19再構成表面における空孔湧出過程 (2015)
  • Author(s): 今津 研太, 武良 光太郎, 木谷 哲, 小花 絃暉, 橋本 修一郎, 神岡 武文, 渡邉 孝信
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学湘南キャンパス
  • Year and Date: 2015-03-13
• [Presentation] ナノワイヤ型ショットキー障壁トンネルFETの動作解析 (2015)
  • Author(s): 徐 泰宇, 小杉山 洋希, 橋本 修一郎, 武井 康平, ソン セイ, 麻田 修平, 張 旭, 若水 昂, 松川 貴, 昌原 明植, 渡邉 孝信
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学湘南キャンパス
  • Year and Date: 2015-03-12
• [Presentation] ナノワイヤ型ショットキー障壁トンネルFETのON電流密度増大 (2015)
  • Author(s): 麻田 修平, 小杉山 洋希, 橋本 修一郎, 武井 康平, ソン セイ, 張 旭, 徐 泰宇, 若水 昂, 松川 貴, 昌原 明植, 渡邉孝信
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学湘南キャンパス
  • Year and Date: 2015-03-11
• [Presentation] 酸化膜被覆型SiナノワイヤにおけるNi合金化プロセスの分子動力学的解析 (2015)
  • Author(s): 橋本 修一郎, 木谷 哲, 図師 知文, 渡邉 孝信
  • Organizer: 第20回ゲートスタック研究会
  • Place of Presentation: 東レリサーチセンター
  • Year and Date: 2015-01-30
• [Presentation] SiO2/Si界面の結晶性劣化によるSiナノワイヤのNi化速度の上昇 (2015)
  • Author(s): 武井 康平, 小杉山 洋希, 橋本 修一郎, ソン セイ, 麻田 修平, 徐 泰宇, 若水 昂, 今井 亮佑, 徳武 寛紀, 富田 基裕, 小椋 厚志, 松川 貴, 昌原 明植, 渡邉 孝信
  • Organizer: 第20回ゲートスタック研究会
  • Place of Presentation: 東レリサーチセンター
  • Year and Date: 2015-01-30
• [Presentation] Impact of post-oxidation annealing of Si nanowire on its Ni silicidation rate (2014)
  • Author(s): Shuichiro Hashimoto, Hiroki Kosugiyama, Kohei Takei, Jing Sun, R. Imai, H. Tokutake, Motohiro Tomita, Atsushi Ogura, Takashi Matsukawa Meishoku Masahara and Takanobu Watanabe
  • Organizer: 27th International Microprocesses and Nanotechnology Conference (MNC 2014)
  • Place of Presentation: Hilton Fukuoka Sea Hawk
  • Year and Date: 2014-11-06
• [Presentation] 分子シミュレーションによるSi表面の空孔クラスタとNi原子の相互作用の解析 (2014)
  • Author(s): 木谷哲，橋本修一郎，武良光太郎，今津研太，小花絃暉，神岡武文，渡邉孝信
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学
  • Year and Date: 2014-09-20
• [Presentation] 酸化膜被覆型Siナノワイヤのシリサイド化に伴う破裂現象 (2014)
  • Author(s): 武井康平，小杉山洋希，橋本修一郎，セイ ソン，麻田修平，徐泰宇，若水昂，松川貴，昌原明植，渡邉孝信
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学
  • Year and Date: 2014-09-19
• [Presentation] SiナノワイヤのNiシリサイド化速度へのポスト酸化アニールの影響 (2014)
  • Author(s): 孫 静，橋本修一郎，小杉山洋希，武井康平，麻田修平，徐泰宇，若水昂，今井亮佑，徳武寛紀，松川貴，富田基裕，小椋厚志，昌原明植，渡邉孝信
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学
  • Year and Date: 2014-09-19
• [Presentation] Niシリサイド化速度のSi結晶構造依存性 -分子動力学法による解析- (2014)
  • Author(s): 橋本修一郎，小杉山洋希，セイ ソン，武井康平，木谷哲，図師知文，渡邉孝信
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学
  • Year and Date: 2014-09-17