| Project/Area Number |
26630136
|
|---|
| Research Category |
Grant-in-Aid for Challenging Exploratory Research
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | Waseda University |
|---|
Principal Investigator |
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
INABA Masafumi 早稲田大学, 電子物理システム学科, 助手 (20732407)
|
|---|
| Project Period (FY) |
2014-04-01 – 2016-03-31
|
| Project Status |
Completed (Fiscal Year 2015)
|
| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2014: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
|
|---|
| Keywords | カーボンナノチューブ / シリコンカーバイド |
|---|
| Outline of Final Research Achievements |
Carbon nanotube (CNT) forest was regrown by CVD method from densely packed CNT forest on Silicon carbide (SiC), which has zigzag chiralities. The patterning growth of base CNT forest on SiC was performed by ZnO/C double-layer mask. To obtain the CNT edges, we used hydrogen peroxide treatment. The regrowth of CNT forest was succeeded in CH4/H2 system at over 900 oC. This result is useful for the application of ohmic electrode of SiC power devices, where high current durability is required.
|
