| Project/Area Number |
26630139
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
MORIYAMA Satoshi 独立行政法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, MANA独立研究者 (00415324)
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| Project Period (FY) |
2014-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2014: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
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| Keywords | グラフェン / 量子ホール効果 / ナノ材料 / 薄膜・量子構造 / 酸化イットリウム |
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| Outline of Final Research Achievements |
In the present study, we attempted to develop suitable substrates for two-dimensional atomic layer materials toward the application of electronic devices, and fabricated the nano-devices on the novel substrate. We adopted the Yttrium oxide (Y-O)/graphite as substrate materials, and the substrate was fabricated. Single-layer graphene was transferred on this substrate, and the device structures were designed. The graphite substrate used as a back gate electrode. From the four-terminal measurent of the devices, we observed the integer quantum Hall effect of a single-layer graphene, and estimated the mobility equal with on the oxidized silicon substrate, high carrier density modulation as a function of the back gate voltage. These results indicate that the Y-O/graphite structure is useful as the substrate for two-dimensional atomic layer materials.
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