| Project/Area Number |
26630141
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Hokkaido University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
ARITA MASASHI 北海道大学, 大学院情報科学研究科, 准教授 (20222755)
MORIE TAKASHI 九州工業大学, 生命体工学研究科, 教授 (20294530)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2014: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | 抵抗変化メモリ / 多値メモリ / 不揮発性機能デバイス / ニューラル素子 / 電子顕微鏡 / アナログメモリ |
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| Outline of Final Research Achievements |
In order to realize resistive random access memories (ReRAMs) usable to neural-network application, we achieved great advance showing the possibility of resistance change by the use of a control terminal in multiple-terminal ReRAM devices.
One of the biggest problems of development of ReRAMs is the unclearness of the operation mechanisms because it is very difficult to find out structural changes occurring in nano-scale area. To overcome the problem, we have employed in-situ transmission electron microscopy (TEM) technology in which electrical characteristics are measured during TEM observation. Although the in-situ TEM has been used for two-terminal devices, we developed a new system applicable to multiple-terminal devices. By employing the system to analyze Cu-filament formation mechanism in the Cu/WOx ReRAM, we found that the mechanism strongly suggest the possibility of filament formation caused by the electric field from the control terminal.
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