| Project/Area Number |
26630144
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tohoku University |
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Principal Investigator |
Suzuki Ken 東北大学, 工学(系)研究科(研究院), 准教授 (40396461)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2014: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | マイクロバンプ / 銅 / 電界めっき / 三次元実装 / 機械特性 / めっき / 銅マイクロバンプ / 結晶配向性 / 強度信頼性 / 残留応力 |
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| Outline of Final Research Achievements |
In this study, the fabrication method of low-elastic modulus micro Cu bumps with (100) crystallographic orientation was studied for reducing the thermal and residual stresses in three-dimensional (3D) integration of silicon microelectronic devices. Crystallographic orientation and quality of the atomic arrangement of the electroplated thin films were measured by XRD (X-ray diffraction) analysis and EBSD (Electron Back Scattering Diffraction) method. All the electroplated samples formed on the α-Ta/Cu base layer are oriented (111) preferentially. However, the ratio of (100) orientation in an electroplated Cu film was increased by applying β-Ta/Cu base layer. Young’s modulus of the film were measured by Nano-Indentation test and Young’s modulus of the film with (100) orientation decreased to 127 GPa from 145 GPa in the (111) oriented film. Therefore, the low-elastic modulus Cu micro bumps should be realized by usingβ-Ta/Cu base layer for the Cu electroplating.
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