| Project/Area Number |
26630150
|
|---|
| Research Category |
Grant-in-Aid for Challenging Exploratory Research
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Electron device/Electronic equipment
|
|---|
| Research Institution | The University of Tokyo |
|---|
Principal Investigator |
Nakane Ryohso 東京大学, 工学(系)研究科(研究院), 准教授 (50422332)
|
|---|
| Project Period (FY) |
2014-04-01 – 2016-03-31
|
| Project Status |
Completed (Fiscal Year 2015)
|
| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2014: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
|
|---|
| Keywords | スピントロニクス / 強磁性薄膜 / 電子材料 / 半導体デバイス / 薄膜 / 電子デバイス |
|---|
| Outline of Final Research Achievements |
The purpose of this study is to fabricate ferromagnetic electrodes/III-V semiconductor structure which is applicable to the source and drain contacts of spin metal-oxide-semiconductor field-effect transistors fabricated with the self-aligned process. Fabrication of ferromagnetic alloys was performed by annealing of metal/semiconductor structures, and the resulting alloys were analyzed.
In the case of Mn/InGaAs structures, ferromagnetic alloys were not obtained for all the fabrication conditions. In the case of Mn/InP structures, single-phase ferromagnetic alloy MnP was obtained for some annealing conditions, which were characterized by X-ray reflective diffraction and magnetic hysteresis. However, the MnP films do not have flat surfaces and there was a void in the vicinity of the MnP/InP interface in the lateral direction. Thus, these issues should be overcome by optimizing fabrication process.
|
