Development of silicon quantum dot devices toward quantum information transfer
| Project/Area Number |
26630151
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
Kodera Tetsuo 東京工業大学, 理工学研究科, 准教授 (00466856)
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| Research Collaborator |
HORIBE Kosuke
NOGUCHI Tomohiro
ANDREEV Aleksey
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2014: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | 量子デバイス / スピンデバイス / 量子情報 / 量子ドット |
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| Outline of Final Research Achievements |
We developed silicon quantum dot devices toward quantum optical communication in the future. We fabricated silicon coupled two quantum dots with different sizes and realized quantum states with different quantum energies in each quantum dot. We also realized stable silicon quantum dots using an ultrathin silicon layer. We demonstrated large charging energy of the quantum dots, which is desirable for the stability during application of photons.
We published these achievements in several journals, international conferences, and domestic conferences.
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Report
(3 results)
Research Products
(36 results)
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[Presentation] Coupled Si quantum dot devices2015
Author(s)
T. Honda, K. Horibe, R. Mizokuchi, L. Yi, K. Iwasaki, S. Hiraoka, T. Kodera, S. Oda
Organizer
11th International Nanotechnology Conference on Communication and Cooperation (INC11)
Place of Presentation
Fukuoka, Japan
Year and Date
2015-05-11
Related Report
Int'l Joint Research
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