| Project/Area Number |
26630153
|
|---|
| Research Category |
Grant-in-Aid for Challenging Exploratory Research
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Electron device/Electronic equipment
|
|---|
| Research Institution | Tokyo Institute of Technology |
|---|
Principal Investigator |
Sugahara Satoshi 東京工業大学, 科学技術創成研究院, 准教授 (40282842)
|
|---|
| Project Period (FY) |
2014-04-01 – 2017-03-31
|
| Project Status |
Completed (Fiscal Year 2016)
|
| Budget Amount *help |
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2016: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
|
|---|
| Keywords | スピントロニクス / スピン注入 / スピントランジスタ / スピン伝導 / シリコン / スピンデバイス / 非局所デバイス / スピン蓄積効果 / スピン注入源 |
|---|
| Outline of Final Research Achievements |
Spin injection phenomena for a Si channel employing tunnel-contact-type spin injectors with MgO, TiO2, and HfO2 barriers were investigated. Using three-terminal spin-accumulation devices with these spin injectors, Hanle-effect signals from spin-polarized electrons injected in the device were successfully observed. The Hanle-effect signals were decomposed into channel-spin and trap-spin components. The proportion of the channel-spin component strongly depended on the process condition of the tunnel barriers. In particular, the MgO spin injector fabricated by an optimized process condition exhibited spin injection with only a single channel-spin component. Fabrication processes, spin injection abilities, and other features of spin injectors with TiO2 and HfO2 tunnel barriers were also demonstrated. In addition, the design scheme of a spin injector/detector in four-terminal Hanle-effect Si-channel MOS devices was also established.
|
