Si-channel Hanle-effect spin devices for spin injection and spin transport.
| Project/Area Number |
26630153
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
Sugahara Satoshi 東京工業大学, 科学技術創成研究院, 准教授 (40282842)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2016: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Keywords | スピントロニクス / スピン注入 / スピントランジスタ / スピン伝導 / シリコン / スピンデバイス / 非局所デバイス / スピン蓄積効果 / スピン注入源 |
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| Outline of Final Research Achievements |
Spin injection phenomena for a Si channel employing tunnel-contact-type spin injectors with MgO, TiO2, and HfO2 barriers were investigated. Using three-terminal spin-accumulation devices with these spin injectors, Hanle-effect signals from spin-polarized electrons injected in the device were successfully observed. The Hanle-effect signals were decomposed into channel-spin and trap-spin components. The proportion of the channel-spin component strongly depended on the process condition of the tunnel barriers. In particular, the MgO spin injector fabricated by an optimized process condition exhibited spin injection with only a single channel-spin component. Fabrication processes, spin injection abilities, and other features of spin injectors with TiO2 and HfO2 tunnel barriers were also demonstrated. In addition, the design scheme of a spin injector/detector in four-terminal Hanle-effect Si-channel MOS devices was also established.
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Report
(4 results)
Research Products
(17 results)
