| Project/Area Number |
26630291
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Physical properties of metals/Metal-base materials
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| Research Institution | The University of Tokyo |
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Principal Investigator |
Koji Kita 東京大学, 工学(系)研究科(研究院), 准教授 (00343145)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2014: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | 界面磁気異方性 / 強磁性体 / 電界効果 / 不揮発性メモリ / 化学状態 / 不揮発メモリ / 酸素欠損 |
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| Outline of Final Research Achievements |
We investigated the impacts of dielectric material selections on the voltage-induced change of interface anisotropy energy (Kint) at ferromagnetic CoFeB - dielectric interfaces. First we examined the effects of ultrathin metal insertion between the ferromagnetic and oxides. This does not induce any nonvolatile change of Kint, however, the amount of voltage-induced change of Kint was enlarged. This effect was pronounced especially when an element with small electronegativity, as Zr for example, was employed for the metal insertion layer. In addition an enhancement of both Kint and its voltage-induced change was found when oxide at the interface was partially replaced by fluoride. These results clearly show that the chemical states and compositions of the interface dielectrics are crucially important to maximize the voltage-induced effects.
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